BSD840N Infineon Technologies, BSD840N Datasheet - Page 7

• Manufacturer Part Number: BSD840N
• Manufacturer: Infineon Technologies

Specifications of BSD840N

• Package: SOT-363 dual
• Vds (max): 20.0 V
• Rds (on) (max) (@10v): -
• Rds (on) (max) (@4.5v): -
• Rds (on) (max) (@2.5v): 400.0 mOhm

Rev 2.3
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
10
10
10
25
24
23
22
21
20
19
18
17
16
AV
-1
-2
0
-60
=f(T
10
); R
0
j
GS
); I
j(start)
=16 Ω
-20
D
=250 µA
10
1
20
t
T
AV
j
10
[°C]
[µs]
2
60
25 °C
125 °C
100
100 °C
10
3
140
10
page 7
4
14 Typ. gate charge
V
parameter: V
16 Gate charge waveforms
GS
=f(Q
Q
V
V
5
4
3
2
1
0
g(th)
g s(th)
GS
0
gate
); I
DD
Q
D
=0.88 A pulsed
g s
0.1
0.2
4 V
Q
Q
gate
g
Q
[nC]
sw
Q
16 V
0.3
g d
10 V
0.4
BSD840N
Q
g ate
2011-07-14
0.5