BTM 7755G Infineon Technologies, BTM 7755G Datasheet - Page 10

• Manufacturer Part Number: BTM 7755G
• Manufacturer: Infineon Technologies

Specifications of BTM 7755G

• Packages: PG-DSO-36
• Operating Range: 5.5 - 28.0 V
• Rds (on) (typ): 150.0 mOhm
• Id(lim): 12.0 A
• Iq (typ): 5.0 µA
• Diagnosis: OV-, OC-, OT-failure flag

6.2
The power stages of the BTM7755G consist of p-channel vertical DMOS transistors for the high side switches and
n-channel vertical DMOS transistors for the low side switches. All protection and diagnostic functions are located
in a separate control chip. Both switches, high side and low side, allow active freewheeling and thus minimize
power dissipation in the forward operation of the integrated diodes.
The on state resistance R
typical on state resistance characteristics are shown in Figure 7.
Figure 7
Data Sheet
High Side Switch
160
140
120
100
80
60
40
20
0
4
Power Stages
Typical On State Resistance vs. Supply Voltage
8
12
ON
is dependent on the supply voltage
16
20
T
T
T
j
j
j
= 25°C
= -40°C
= 150°C
V
24
S
[V]
28
10
Low Side Switch
220
200
V
180
160
140
120
100
80
60
40
20
S
0
as well as on the junction temperature
4
Block Description and Characteristics
8
12
High Current H-Bridge
16
Rev. 2.0, 2010-05-28
20
T
T
T
j
= 150°C
j
j
= -40°C
= 25°C
V
24
BTM7755G
S
[V]
28
T
j
. The