FDMS8018 Fairchild Semiconductor, FDMS8018 Datasheet - Page 4

• Manufacturer Part Number: FDMS8018
• Description: This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers
• Manufacturer: Fairchild Semiconductor

FDMS8018 Rev.C
Typical Characteristics
0.01
500
100
200
100
0.1
10
10
10
Figure 7.
0.001
1
8
6
4
2
0
0.01
1
0
THIS AREA IS
LIMITED BY r
Figure 9.
Figure 11. Forward Bias Safe
I
D
= 30 A
0.01
10
V
Switching Capability
DS
Gate Charge Characteristics
SINGLE PULSE
T
R
T
0.1
t
J
A
, DRAIN to SOURCE VOLTAGE (V)
V
θ
AV
Operating Area
JA
DS(on)
= MAX RATED
DD
Unclamped Inductive
= 25
Q
, TIME IN AVALANCHE (ms)
= 125
g
= 10 V
20
0.1
, GATE CHARGE (nC)
o
C
T
o
C/W
J
V
= 125
T
DD
J
30
1
= 25
= 15 V
1
o
C
T
o
C
T
J
J
V
= 25 °C unless otherwise noted
= 100
DD
40
10
= 20 V
10
o
C
100
50
100 us
1 ms
10 ms
100 ms
1 s
10 s
DC
100
1000
60
4
10000
5000
1000
1000
200
150
100
100
100
0.5
50
10
10
Figure 10.
0
1
10
0.1
25
Figure 12.
-4
Limited by Package
f = 1 MHz
V
Figure 8.
GS
Current vs Case Temperature
R
θ
JC
10
= 0 V
= 1.5
-3
V
50
DS
Power Dissipation
Maximum Continuous Drain
to Source Voltage
, DRAIN TO SOURCE VOLTAGE (V)
T
o
C
10
C/W
Single Pulse Maximum
Capacitance vs Drain
, C
t, PULSE WIDTH (sec)
-2
ASE TEMPERATURE (
1
75
10
-1
V
GS
= 4.5 V
1
100
SINGLE PULSE
R
T
V
A
θ
JA
10
GS
= 25
o
10
C )
= 125
= 10 V
C
C
C
125
oss
o
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iss
C
100
o
C/W
1000
150
50