FDMS8018 Fairchild Semiconductor, FDMS8018 Datasheet - Page 3

• Manufacturer Part Number: FDMS8018
• Description: This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers
• Manufacturer: Fairchild Semiconductor

FDMS8018 Rev.C
Typical Characteristics
180
150
120
180
150
120
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
90
60
30
90
60
30
Figure 3. Normalized On Resistance
0
0
Figure 1.
1.0
-75
0
Figure 5. Transfer Characteristics
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
DS
I
V
D
-50
GS
vs Junction Temperature
= 5 V
= 30 A
1.5
V
= 10 V
0.5
DS
T
V
-25
J
GS
On Region Characteristics
,
,
DRAIN TO SOURCE VOLTAGE (V)
JUNCTION TEMPERATURE (
, GATE TO SOURCE VOLTAGE (V)
T
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
J
2.0
= 150
0
V
V
V
V
GS
GS
GS
GS
1.0
= 4.5 V
= 4 V
= 3.5 V
= 10V
o
25
C
μ
s
2.5
50
T
1.5
J
T
= 25 °C unless otherwise noted
J
3.0
75
= -55
μ
T
s
J
o
100 125 150
o
= 25
C )
C
2.0
3.5
V
o
GS
C
= 3 V
2.5
4.0
3
0.001
1000
0.01
100
0.1
10
5
4
3
2
1
0
8
6
4
2
0
Figure 2.
Figure 4.
1
0.0
Forward Voltage vs Source Current
0
vs Drain Current and Gate Voltage
2
Figure 6.
V
GS
= 0 V
V
SD
0.2
30
, BODY DIODE FORWARD VOLTAGE (V)
Normalized On-Resistance
V
On-Resistance vs Gate to
GS
T
I
Source Voltage
V
D
J
4
Source to Drain Diode
,
GS
,
= 150
GATE TO SOURCE VOLTAGE (V)
I
DRAIN CURRENT (A)
D
0.4
= 3 V
60
= 30 A
o
C
0.6
90
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
6
V
V
T
T
GS
GS
J
J
= 125
= 25
= 4.5 V
= 3.5 V
0.8
120
o
o
C
T
C
J
V
T
= -55
GS
J
8
= 25
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V
1.0
= 4 V
150
GS
o
o
C
= 10 V
C
μ
μ
s
s
1.2
180
10