VN5010AKE STMICRO, VN5010AKE Datasheet - Page 21

• Manufacturer Part Number: VN5010AKE
• Manufacturer: STMICRO

VN5010AK-E
3
3.1
3.1.1
Application information
Figure 26. Application schematic
GND protection network against reverse battery
Solution 1: resistor in the ground line (R
This can be used with any type of load.
The following is an indication on how to dimension the R
1.
2.
where -I
maximum rating section of the device datasheet.
Power Dissipation in R
P
This resistor can be shared amongst several different HSDs. Please note that the value of
this resistor should be calculated with formula (1) where I
maximum on-state currents of the different devices.
Please note that if the microprocessor ground is not shared by the device ground then the
R
values. This shift will vary depending on how many devices are ON in the case of several
high side drivers sharing the same R
If the calculated power dissipation leads to a large resistor or several devices have to share
the same resistor then ST suggests to utilize Solution 2 (see below).
D
GND
= (-V
R
R
will produce a shift (I
GND
GND
+5V
mC
CC
GND
)
≤ 600 mV / (I
≥ (−V
2
/ R
is the DC reverse ground pin current and can be found in the absolute
GND
CC
C
ext
R
) / (-I
R
R
prot
prot
prot
GND
GND
S(on)max
S(on)max
(when V
)
R
SENSE
Doc ID 13218 Rev 6
CURRENT SENSE
IINPUT
).
CS_DIS
* R
CC
GND
<0: during reverse battery situations) is:
GND
.
) in the input thresholds and the status output
V
GND
GND
GND
R
GND
GND
S(on)max
only)
V
CC
resistor.
D
GND
becomes the sum of the
Application information
OUTPUT
D
ld
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