BF992 NXP Semiconductors, BF992 Datasheet - Page 5

Depletion type Field-Effect Transistor in a plastic SOT143 microminiature package

BF992

Manufacturer Part Number
BF992
Description
Depletion type Field-Effect Transistor in a plastic SOT143 microminiature package
Manufacturer
NXP Semiconductors
Datasheet

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NXP Semiconductors
handbook, halfpage
handbook, halfpage
Silicon N-channel dual gate MOS-FET
V
V
Fig.5
G2-S
DS
(mA)
(mS)
I D
|y fs |
= 10 V; T
Fig.3 Output characteristics; typical values.
= 4 V; T
24
20
16
12
30
20
10
8
4
0
0
0
0
Forward transfer admittance as a function
of drain current; typical values.
j
j
= 25 C.
= 25 C.
2
V G2-S = 0 V
4
10
6
8
I D (mA)
V G1-S = 0.2 V
V DS (V)
10
0 V
0.1 V
1 V
MGE797
MGE798
0.1 V
0.2 V
0.3 V
0.4 V
0.5 V
0.6 V
Rev. 04 - 21 November 2007
12
20
5 V
4 V
3 V
2 V
handbook, halfpage
handbook, halfpage
V
V
Fig.6
DS
DS
(mA)
(mS)
I D
Fig.4 Transfer characteristics; typical values.
Y fs
= 10 V; T
= 10 V; T
30
20
10
30
20
10
0
0
1
1
Forward transfer admittance as a function
of gate 1-source voltage; typical values.
j
j
= 25 C.
= 25 C.
V G2-S = 5 V
0
0
V G1-S (V)
V G1-S (V)
Product specification
4 V 3 V
1 V
0 V
2 V
MGE799
MGE800
BF992
V G2-S =
5 of 9
1
1
5 V
4 V
3 V
2 V
1 V
0 V

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