BF992 NXP Semiconductors, BF992 Datasheet

Depletion type Field-Effect Transistor in a plastic SOT143 microminiature package

BF992

Manufacturer Part Number
BF992
Description
Depletion type Field-Effect Transistor in a plastic SOT143 microminiature package
Manufacturer
NXP Semiconductors
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BF992
Manufacturer:
NXP
Quantity:
24 000
Part Number:
BF992
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Part Number:
BF992TRD
Manufacturer:
VISHAY/威世
Quantity:
20 000
Dear customer,
As from October 1st, 2006 Philips Semiconductors has a new trade name
- NXP Semiconductors, which will be used in future data sheets together with new contact
details.
In data sheets where the previous Philips references remain, please use the new links as
shown below.
http://www.philips.semiconductors.com use http://www.nxp.com
http://www.semiconductors.philips.com use http://www.nxp.com (Internet)
sales.addresses@www.semiconductors.philips.com use salesaddresses@nxp.com
(email)
The copyright notice at the bottom of each page (or elsewhere in the document,
depending on the version)
- © Koninklijke Philips Electronics N.V. (year). All rights reserved -
is replaced with:
- © NXP B.V. (year). All rights reserved. -
If you have any questions related to the data sheet, please contact our nearest sales
office via e-mail or phone (details via salesaddresses@nxp.com). Thank you for your
cooperation and understanding,
NXP Semiconductors
BF992
Silicon N-channel dual gate MOS-FET
Rev. 04 — 21 November 2007
IMPORTANT NOTICE
Product data sheet

Related parts for BF992

BF992 Summary of contents

Page 1

... BF992 Silicon N-channel dual gate MOS-FET Rev. 04 — 21 November 2007 IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below ...

Page 2

... G2 MHz 200 MHz G2-S Rev November 2007 Product specification BF992 DESCRIPTION source d drain gate 2 2 gate s,b MAM039 TYP. MAX. UNIT ...

Page 3

... P tot max (mW) 100 0 0 100 Fig.2 Power derating curves. CONDITIONS see Fig.2; note 1 amb 10 mm 0.7 mm. MBL033 200 o T amb ( C) Rev November 2007 Product specification BF992 MIN. MAX. UNIT 200 mW 65 +150 C 150 ...

Page 4

... CONDITIONS VALUE note 1 460 MIN G1- G2 G2-S MIN. TYP 1 1.2 S BF992 UNIT K/W MAX. UNIT 1 MAX. UNIT ...

Page 5

... Product specification G2 G1-S ( G1-S ( Forward transfer admittance as a function of gate 1-source voltage; typical values. BF992 MGE799 MGE800 V G2 ...

Page 6

... G2-S D amb Output admittance as a function of frequency; typical values. 120 mA G2-S D amb of frequency; typical values. Product specification BF992 MGE793 (MHz) MGE796 (MHz ...

Page 7

... scale 0.15 3.0 1.4 1.9 1.7 0.09 2.8 1.2 REFERENCES JEDEC EIAJ Rev November 2007 Product specification detail 2.5 0.45 0.55 0.2 0.1 0.1 2.1 0.15 0.45 EUROPEAN PROJECTION BF992 SOT143B ISSUE DATE 97-02- ...

Page 8

... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev November 2007 BF992 Silicon N-channel dual gate MOS-FET ...

Page 9

... NXP B.V. 2007. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BF992 Supersedes BF992_3 BF992_2 BF992_SF_1 - All rights reserved. Date of release: 21 November 2007 Document identifier: BF992_N_4 ...

Related keywords