BF1212 NXP Semiconductors, BF1212 Datasheet - Page 9

Enhancement type N-channel Field-Effect Transistor in a plastic SOT143B package

BF1212

Manufacturer Part Number
BF1212
Description
Enhancement type N-channel Field-Effect Transistor in a plastic SOT143B package
Manufacturer
NXP Semiconductors
Datasheet

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NXP Semiconductors
2003 Nov 14
handbook, halfpage
handbook, halfpage
N-channel dual-gate MOS-FETs
V
I
Fig.17 Input admittance as a function of frequency;
V
I
Fig.19 Forward transfer admittance and phase as
D
D
DS
DS
(mS)
= 12 mA; T
= 12 mA; T
(mS)
10
y is
y fs
10
10
= 5 V; V
= 5 V; V
10
10
−1
1
1
2
2
10
10
typical values.
functions of frequency; typical values.
G2
G2
amb
amb
= 4 V.
= 4 V.
= 25 C.
= 25 C.
10
10
2
2
ϕ fs
y fs
b is
f (MHz)
f (MHz)
g is
MLE247
MLE245
10
10
3
3
−10
−10
−1
(deg)
ϕ fs
2
9
handbook, halfpage
handbook, halfpage
V
I
Fig.18 Reverse transfer admittance and phase as
V
I
Fig.20 Output admittance as a function of
D
D
DS
DS
= 12 mA; T
= 12 mA; T
(mS)
(μS)
10
y os
y rs
10
10
= 5 V; V
= 5 V; V
10
10
BF1212; BF1212R; BF1212WR
−1
1
1
3
2
10
10
functions of frequency; typical values.
frequency; typical values.
G2
G2
amb
amb
= 4 V.
= 4 V.
= 25 C.
= 25 C.
10
10
2
2
b os
g os
ϕ rs
y rs
f (MHz)
f (MHz)
Product specification
MLE246
MLE248
10
10
3
3
−10
−10
−10
−1
(deg)
ϕ rs
3
2

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