BF1212 NXP Semiconductors, BF1212 Datasheet - Page 6

Enhancement type N-channel Field-Effect Transistor in a plastic SOT143B package

BF1212

Manufacturer Part Number
BF1212
Description
Enhancement type N-channel Field-Effect Transistor in a plastic SOT143B package
Manufacturer
NXP Semiconductors
Datasheet

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NXP Semiconductors
2003 Nov 14
handbook, halfpage
handbook, halfpage
N-channel dual-gate MOS-FETs
Fig.7
(1) V
(2) V
(3) V
(4) V
(1) V
(2) V
(3) V
(4) V
(mA)
(μA)
I G1
Fig.5 Transfer characteristics; typical values.
100
I D
30
20
10
80
60
40
20
0
G2-S
G2-S
G2-S
G2-S
0
G2-S
G2-S
G2-S
G2-S
0
0
Gate 1 current as a function of gate 1
voltage; typical values.
= 4 V.
= 3.5 V.
= 3 V.
= 2.5 V.
= 4 V.
= 3.5 V.
= 3 V.
= 2.5 V.
0.5
0.5
(5) V
(6) V
(7) V
(5) V
(6) V
(7) V
1
G2-S
G2-S
G2-S
G2-S
G2-S
G2-S
1
(2)
(3)
= 2 V.
= 1.5 V.
= 1 V.
= 2 V.
= 1.5 V.
= 1 V.
1.5
(1)
1.5
(4)
(5)
(6)
(7)
V G1-S (V)
V G1-S (V)
2
(1)
V
T
V
T
j
j
DS
DS
= 25 C.
= 25 C.
MLE235
MLE233
(2)
= 5 V.
= 5 V.
(5)
(3)
(4)
(6)
(7)
2.5
2
6
handbook, halfpage
handbook, halfpage
Fig.8
(1) V
(2) V
(3) V
(4) V
(5) V
(1) V
(2) V
(3) V
(4) V
(mA)
(mS)
y fs
I D
Fig.6 Output characteristics; typical values.
40
30
20
10
32
24
16
BF1212; BF1212R; BF1212WR
G1-S
G1-S
G1-S
G1-S
G1-S
0
G2-S
G2-S
G2-S
G2-S
8
0
0
0
Forward transfer admittance as a function
of drain current; typical values.
= 1.6 V.
= 1.5 V.
= 1.4 V.
= 1.3 V.
= 1.2 V.
= 4 V.
= 3.5 V.
= 3 V.
= 2.5 V.
(7)
4
2
(6) V
(7) V
(8) V
(9) V
(5) V
(6) V
(7) V
8
(6)
G1-S
G1-S
G1-S
G1-S
G2-S
G2-S
G2-S
= 1.1 V.
= 1.0 V.
= 0.9 V.
= 0.8 V.
= 2 V.
= 1.5 V.
= 1 V.
12
(5)
4
Product specification
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
(3)
V DS (V)
16
V
T
V
T
I D (mA)
(2)
j
j
G2-S
DS
= 25 C.
= 25 C.
MLE236
MLE234
= 5 V.
(1)
(4)
= 4 V.
20
6

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