BLF7G24L-100 NXP Semiconductors, BLF7G24L-100 Datasheet - Page 8

100 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz

BLF7G24L-100

Manufacturer Part Number
BLF7G24L-100
Description
100 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
BLF7G24L-100_7G24LS-100
Product data sheet
Fig 13. Single carrier W-CDMA peak-to-average power
PAR
(dB)
(1) f = 2300 MHz
(2) f = 2400 MHz
8
6
4
2
0
0
V
ratio as a function of load power;
typical values
DS
= 28 V; I
20
Dq
= 900 mA.
40
(1)
(2)
60
80
All information provided in this document is subject to legal disclaimers.
001aan507
P
L
(W)
BLF7G24L-100; BLF7G24LS-100
100
Rev. 4 — 22 July 2011
Fig 14. Single carrier W-CDMA peak output power as a
P
(W)
L(M)
(1) f = 2300 MHz
(2) f = 2400 MHz
250
200
150
100
50
0
0
V
function of load power; typical values
DS
= 28 V; I
20
Dq
= 900 mA.
40
(1)
(2)
Power LDMOS transistor
60
© NXP B.V. 2011. All rights reserved.
80
001aan508
P
L
(W)
100
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