BLF7G24L-100 NXP Semiconductors, BLF7G24L-100 Datasheet - Page 3

• Manufacturer Part Number: BLF7G24L-100
• Description: 100 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Characteristics
7. Test information
BLF7G24L-100_7G24LS-100
Product data sheet
7.1 Ruggedness in class-AB operation
Table 6.
T
Remark: All testing performed in a class-AB production test circuit.
Table 7.
Mode of operation: 1-carrier N-CDMA, single carrier IS-95 with pilot, paging, sync and 6 traffic
channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF, channel bandwidth
is 1.2288 MHz; f
T
The BLF7G24L-100 and BLF7G24LS-100 are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
V
Symbol Parameter
V
I
I
Symbol
P
G
RL

ACPR
V
I
g
R
DSS
DSX
GSS
j
case
DS
fs
D
(BR)DSS
GS(th)
L(AV)
DS(on)
p
= 25
in
= 28 V; I
= 25
885k

C unless otherwise specified.

drain-source breakdown voltage
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance
C; unless otherwise specified.
Characteristics
Functional test information
Parameter
average output power
power gain
input return loss
drain efficiency
adjacent channel power ratio (885 kHz)
Dq
1
= 900 mA; P
All information provided in this document is subject to legal disclaimers.
= 2300 MHz; f
BLF7G24L-100; BLF7G24LS-100
Rev. 4 — 22 July 2011
L
2
= 100 W (CW); f = 2300 MHz.
= 2400 MHz; RF performance at V
Conditions
V
V
V
V
V
V
V
V
I
D
GS
DS
GS
GS
DS
GS
DS
GS
= 5.25 A
= 10 V; I
= 10 V
= 10 V; I
= 0 V; I
= 0 V; V
= V
= 11 V; V
= V
GS(th)
GS(th)
Conditions
D
DS
D
D
= 1 mA
+ 3.75 V;
+ 3.75 V;
DS
= 150 mA
= 5.35 A
= 28 V
= 0 V
DS
Power LDMOS transistor
= 28 V; I
Min
65
1.5
-
25.1 29
-
-
-
Min Typ Max Unit
-
17.3 18
-
22
-
© NXP B.V. 2011. All rights reserved.
Dq
Typ
-
1.8
-
-
10.5 -
0.1
20
14 -
27
46 40
= 900 mA;
-
-
-
Max Unit
-
2.3
5
-
500
-
3 of 14
W
dB
dB
%
dBc
V
V
A
A
nA
S
