BLF6G27LS-75 NXP Semiconductors, BLF6G27LS-75 Datasheet - Page 4

• Manufacturer Part Number: BLF6G27LS-75
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF6G27-75_6G27LS-75_1
Product data sheet
Fig 1.
(dB)
G
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
p
20
18
16
14
12
10
0
V
Power gain as a function of load power;
typical values
DS
= 28 V; I
7.1 Ruggedness in class-AB operation
7.2 One-tone CW
20
Dq
= 600 mA.
The BLF6G27-75 and BLF6G27LS-75 are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
V
DS
= 28 V; I
40
(1)
(3)
(2)
Dq
60
= 600 mA; P
P
001aak974
L
(W)
Rev. 01 — 22 October 2009
80
BLF6G27-75; BLF6G27LS-75
L
= 65 W (CW); f = 2500 MHz.
Fig 2.
(%)
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
D
70
60
50
40
30
20
10
0
0
V
Drain efficiency as a function of load power;
typical values
DS
= 28 V; I
20
Dq
WiMAX power LDMOS transistor
= 600 mA.
40
60
© NXP B.V. 2009. All rights reserved.
P
001aak975
L
(2)
(1)
(3)
(W)
80
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