BLF6G27LS-75 NXP Semiconductors, BLF6G27LS-75 Datasheet - Page 2

• Manufacturer Part Number: BLF6G27LS-75
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
BLF6G27-75_6G27LS-75_1
Product data sheet
1.3 Applications
I
I
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
BLF6G27-75 (SOT502A)
1
2
3
BLF6G27LS-75 (SOT502B)
1
2
3
Type number
BLF6G27-75
BLF6G27LS-75
Symbol
V
V
I
T
T
D
stg
j
DS
GS
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
RF power amplifiers for base stations and multicarrier applications in the
2500 MHz to 2700 MHz frequency range
Connected to flange.
Pinning
Ordering information
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Description
drain
gate
source
drain
gate
source
Package
Name
-
-
Rev. 01 — 22 October 2009
Description
flanged LDMOST ceramic package; 2 mounting holes;
2 leads
earless flanged LDMOST ceramic package; 2 leads
BLF6G27-75; BLF6G27LS-75
Conditions
[1]
[1]
Simplified outline
WiMAX power LDMOS transistor
1
2
1
2
3
3
Graphic symbol
Min
-
-
-
© NXP B.V. 2009. All rights reserved.
0.5
65
2
2
Max
65
+13
18
+150
200
sym112
sym112
Version
SOT502A
SOT502B
1
3
1
3
2 of 14
Unit
V
V
A
C
C