BLD6G22LS-50 NXP Semiconductors, BLD6G22LS-50 Datasheet - Page 3

• Manufacturer Part Number: BLD6G22LS-50
• Manufacturer: NXP Semiconductors

NXP Semiconductors
4. Block diagram
5. Limiting values
6. Thermal characteristics
7. Characteristics
BLD6G22L-50_BLD6G22LS-50
Product data sheet
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Valid for both main and peak device.
Table 5.
[1]
Table 6.
Valid for both main and peak device.
Symbol
V
V
V
I
T
T
Symbol
R
Symbol Parameter
V
V
V
I
I
D
DSS
DSX
Fig 1.
stg
j
DS
GS(amp)main
GS(amp)peak
(BR)DSS
GS(th)
GSq
th(j-case)
When operated with a 2-carrier (W-CDMA) modulated signal with PAR = 8.3 dB at 0.01 % probability on the
CCDF.
Block diagram of BLD6G22L-50 and BLD6G22LS-50
drain-source breakdown voltage
gate-source threshold voltage
gate-source quiescent voltage
drain leakage current
drain cut-off current
Parameter
thermal resistance from junction to case
Limiting values
Thermal characteristics
Characteristics
Parameter
drain-source voltage
main amplifier gate-source voltage
peak amplifier gate-source voltage
drain current
storage temperature
junction temperature
All information provided in this document is subject to legal disclaimers.
W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor
RF-input/bias main
Rev. 3 — 17 August 2010
BLD6G22L-50; BLD6G22LS-50
bias peak
2
5
90
Conditions
V
V
V
V
V
V
GS
DS
DS
GS
GS
DS
= 10 V; I
= 28 V; I
= 10 V
= 0 V; I
= 0 V; V
= V
main
amplifier
peak
amplifier
GS(th)
001aak932
Conditions
T
90
case
D
DS
D
D
= 0.62 mA
Conditions
+ 3.75 V;
= 31 mA
= 170 mA
1
= 80 C; P
= 28 V
RF-output/V
L
= 8 W
Min Typ Max
65
1.4
1.55 2.05 2.55
-
4.95 5.5
DS
Min
-
-
-
0.5
0.5
65
© NXP B.V. 2010. All rights reserved.
-
1.8
-
[1]
Max
65
+13
+13
10.2
+150
200
Typ
1.9
-
2.4
1.4
-
Unit
V
V
V
A
3 of 15
Unit
K/W
C
C
Unit
V
V
V
A
A