BLD6G22LS-50 NXP Semiconductors, BLD6G22LS-50 Datasheet - Page 2

• Manufacturer Part Number: BLD6G22LS-50
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2. Pinning information
3. Ordering information
BLD6G22L-50_BLD6G22LS-50
Product data sheet
1.3 Applications
Table 2.
[1]
Table 3.
Pin
BLD6G22L-50 (SOT1130A)
1
2
3
4
5
BLD6G22LS-50 (SOT1130B)
1
2
3
4
5
Type number
BLD6G22L-50
BLD6G22LS-50 -
100 % peak power tested for guaranteed output power capability
Integrated ESD protection
Good pair match (main and peak on the same chip)
Independent control of main and peak bias
Internally matched for ease of use
Excellent ruggedness
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
High efficiency RF power amplifiers with digital pre-distortion for W-CDMA multi carrier
applications in the 2110 MHz to 2170 MHz range.
Connected to flange.
Pinning
Ordering information
drain
gate + bias main
source
n.c.
bias peak
drain
gate + bias main
source
n.c.
bias peak
Description
All information provided in this document is subject to legal disclaimers.
Package
Name
-
W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor
Rev. 3 — 17 August 2010
BLD6G22L-50; BLD6G22LS-50
Description
flanged ceramic package; 2 mounting holes; 4 leads
earless flanged ceramic package; 4 leads
[1]
[1]
Simplified outline
4
4
1
2
1
2
5
3
3
5
Graphic symbol
2
2
© NXP B.V. 2010. All rights reserved.
Version
SOT1130A
SOT1130B
1
3
1
3
001aak920
001aak920
2 of 15
5
5