SI4410DY NXP Semiconductors, SI4410DY Datasheet - Page 8

• Manufacturer Part Number: SI4410DY
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
SI4410DY_3
Product data sheet
Fig 13. Forward transconductance as a function of
g
(S)
fs
40
30
20
10
0
drain current; typical values
0
V
DS
> I
10
D
x R
DSon
20
30
T
j
150 °C
= 25 °C
40
I
D
03ae24
(A)
Rev. 03 — 4 December 2009
50
Fig 14. Source current as a function of source-drain
(A)
I
S
50
40
30
20
10
0
voltage; typical values
0
V
GS
N-channel TrenchMOS logic level FET
= 0 V
150 °C
0.4
0.8
T
j
= 25 °C
SI4410DY
1.2
© NXP B.V. 2009. All rights reserved.
V
SD
03ad53
(V)
1.6
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