SI4410DY NXP Semiconductors, SI4410DY Datasheet - Page 7

• Manufacturer Part Number: SI4410DY
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
SI4410DY_3
Product data sheet
Fig 9.
Fig 11. Normalized drain-source on-state resistance
V
GS(th)
(V)
a
2.5
1.5
0.5
1.5
0.5
2
1
0
2
1
0
−60
-60
junction temperature
factor as a function of junction temperature
Gate-source threshold voltage as a function of
0
0
60
60
max
typ
min
120
120
T
03aa33
T
j
j
( ° C)
03ad57
(°C)
Rev. 03 — 4 December 2009
180
180
Fig 10. Drain-source on-state resistance as a function
Fig 12. Gate-source voltage as a function of gate
R
(Ω)
V
DSon
(V)
0.03
0.02
0.01
GS
10
0
8
6
4
2
0
of drain current; typical values
charge; typical values
0
0
I D = 10 A
V DD = 15 V
T j = 25 ºC
T
j
= 25 °C V
N-channel TrenchMOS logic level FET
10
10
GS
= 3.2 V
20
20
3.4 V
30
SI4410DY
3.6 V
30
© NXP B.V. 2009. All rights reserved.
40
Q
G
I
3.8 V
4.5 V
D
10 V
03ad55
(nC)
03ad51
5 V
(A)
40
50
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