PSMN3R8-100BS NXP Semiconductors, PSMN3R8-100BS Datasheet - Page 6

• Manufacturer Part Number: PSMN3R8-100BS
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 6.
PSMN3R8-100BS
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(A)
(S)
g
I
D
fs
250
200
150
100
240
200
160
120
50
80
40
0
0
drain current; typical values
function of drain-source voltage; typical values
Forward transconductance as a function of
Output characteristics: drain current as a
0
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
30
0.5
20.0
10.0
6.0
8.0
5.5
…continued
60
1
1.5
90
V
All information provided in this document is subject to legal disclaimers.
GS
003aaf723
003aaf726
V
I
D
DS
(V) =5
(A)
4.5
Conditions
I
see
I
V
(V)
S
S
DS
= 25 A; V
= 25 A; dI
120
Rev. 2 — 29 February 2012
2
Figure 17
= 50 V
N-channel 100 V 3.9 mΩ standard level MOSFET in D2PAK
GS
S
/dt = -100 A/µs; V
= 0 V; T
Fig 6.
Fig 8.
(A)
I
(pF)
D
10
10
10
10
j
100
C
= 25 °C;
80
60
40
20
5
4
3
2
0
10
function of gate-source voltage; typical values
function of gate-source voltage, typical values
Transfer characteristics: drain current as a
Input and reverse transfer capacitances as a
0
-1
GS
= 0 V;
PSMN3R8-100BS
T
j
1
2
= 175 ° C
Min
-
-
-
10
4
Typ
0.8
75
235
V
V
© NXP B.V. 2012. All rights reserved.
T
GS
GS
j
C
C
003aaf724
003aaf727
= 25 ° C
iss
rss
(V)
(V)
Max
1.2
-
-
10
6
2
Unit
V
ns
nC
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