PSMN3R8-100BS NXP Semiconductors, PSMN3R8-100BS Datasheet - Page 4

• Manufacturer Part Number: PSMN3R8-100BS
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN3R8-100BS
Product data sheet
Symbol
R
R
Fig 4.
th(j-mb)
th(j-a)
Z
10
10
10
(K/W)
th(j-mb)
-1
-2
-3
1
10
Transient thermal impedance from junction to mounting base as a function of pulse duration
-6
0.05
d = 0.5
0.02
Thermal characteristics
0.2
0.1
single shot
Parameter
thermal resistance from junction to
mounting base
thermal resistance from junction to
ambient
10
-5
All information provided in this document is subject to legal disclaimers.
10
-4
Rev. 2 — 29 February 2012
Conditions
see
minimum footprint; mounted on a
printed-circuit board
N-channel 100 V 3.9 mΩ standard level MOSFET in D2PAK
Figure 4
10
-3
10
-2
PSMN3R8-100BS
Min
-
-
10
P
-1
Typ
0.22
50
t
p
T
t
© NXP B.V. 2012. All rights reserved.
p
(s)
003aaf733
 =
Max
0.49
-
t
T
p
t
1
Unit
K/W
K/W
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