NX3008NBK NXP Semiconductors, NX3008NBK Datasheet - Page 7

• Manufacturer Part Number: NX3008NBK
• Description: N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
NX3008NBK
Product data sheet
Fig 6.
Fig 8.
R
DS
(Ω)
(A)
I
D
(on)
0.4
0.3
0.2
0.1
0.0
6
4
2
0
0.0
function of drain-source voltage; typical values
of drain current; typical values
T
Output characteristics: drain current as a
T
(1) V
(2) V
(3) V
(4) V
(5) V
(6) V
Drain-source on-state resistance as a function
0
j
j
= 25 °C
= 25 °C
GS
GS
GS
GS
GS
GS
= 1.5 V
= 1.75 V
= 2.0 V
= 2.25 V
= 2.5 V
= 4.5 V
(1)
4.5 V
2.5 V
0.1
1
(2)
0.2
2
V
GS
1.75 V
1.5 V
2 V
= 1.25 V
0.3
3
All information provided in this document is subject to legal disclaimers.
(3)
(4)
(5)
(6)
V
001aao267
001aao269
I
DS
D
(A)
(V)
0.4
4
Rev. 1 — 2 August 2011
Fig 7.
Fig 9.
R
DS
(Ω)
(A)
I
(on)
D
10
10
10
10
-3
-4
-5
-6
6
4
2
0
0.0
gate-source voltage
of gate-source voltage; typical values
T
(1) minimum values
(2) typical values
(3) maximum values
Sub-threshold drain current as a function of
I
(1) T
(2) T
Drain-source on-state resistance as a function
0
D
j
= 25 °C; V
= 400 mA
30 V, 400 mA N-channel Trench MOSFET
j
j
= 150 °C
= 25 °C
1
DS
0.5
= 5 V
2
(1)
NX3008NBK
3
(2)
1.0
(3)
V
© NXP B.V. 2011. All rights reserved.
GS
4
001aao268
001aao270
(1)
(2)
V
(V)
GS
(V)
1.5
5
7 of 16