NX3008NBK NXP Semiconductors, NX3008NBK Datasheet - Page 6

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology

NX3008NBK

Manufacturer Part Number
NX3008NBK
Description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
Manufacturer
NXP Semiconductors
Datasheet

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NXP Semiconductors
7. Characteristics
Table 7.
NX3008NBK
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
g
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
Source-drain diode
V
DSS
GSS
d(on)
r
d(off)
f
fs
(BR)DSS
GSth
SD
DSon
iss
oss
rss
G(tot)
GS
GD
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
forward
transconductance
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
Conditions
I
I
V
V
V
V
V
V
V
V
V
V
V
V
V
V
T
V
T
V
R
I
All information provided in this document is subject to legal disclaimers.
D
D
S
j
j
DS
DS
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
DS
DS
DS
DS
G(ext)
= 25 °C
= 25 °C
= 350 mA; V
= 250 µA; V
= 250 µA; V
= 30 V; V
= 30 V; V
= 10 V; I
= 15 V; I
= 15 V; f = 1 MHz; V
= 20 V; R
= 8 V; V
= -8 V; V
= 4.5 V; V
= -4.5 V; V
= 2.5 V; V
= -2.5 V; V
= 4.5 V; I
= 4.5 V; I
= 2.5 V; I
= 1.8 V; I
= 6 Ω; T
Rev. 1 — 2 August 2011
DS
D
D
DS
D
D
D
D
GS
GS
L
GS
DS
DS
DS
= 350 mA; T
= 400 mA; V
GS
j
DS
DS
= 350 mA; T
= 350 mA; T
= 200 mA; T
= 10 mA; T
= 250 Ω; V
= 0 V; T
= 25 °C
= 0 V; T
= 0 V; T
= 0 V; T
= V
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
GS
; T
j
j
= 25 °C
j
j
GS
= 25 °C
j
j
j
= 25 °C
= 150 °C
j
j
j
j
GS
= 25 °C
= 25 °C
= 25 °C
j
= 25 °C
= 25 °C
= 25 °C
= 25 °C
j
GS
= 25 °C
j
j
j
= 0 V;
= 25 °C
= 25 °C
= 150 °C
= 25 °C
= 4.5 V;
= 4.5 V;
30 V, 400 mA N-channel Trench MOSFET
Min
30
0.6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.47
NX3008NBK
Typ
-
0.9
-
-
0.2
0.2
10
10
1
1
1
1.8
1.4
2
310
0.52
0.17
0.08
34
6.5
2.2
15
11
69
19
0.85
© NXP B.V. 2011. All rights reserved.
-
-
-
Max
-
1.1
1
10
1
1
-
-
-
-
1.4
2.5
2.1
2.8
-
0.68
-
50
-
30
138
-
1.2
Unit
V
V
µA
µA
µA
µA
nA
nA
nA
nA
mS
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
6 of 16

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