BUK9618-55A NXP Semiconductors, BUK9618-55A Datasheet - Page 8

• Manufacturer Part Number: BUK9618-55A
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK9618-55A
Product data sheet
Fig 13. Gate-source voltage as a function of turn-on
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values
V
(V)
GS
5
4
3
2
1
0
gate charge; typical values
0
5
V
DD
10
= 14 V
15
20
(A)
I
S
100
V
25
80
60
40
20
DD
0
0
= 44 V
All information provided in this document is subject to legal disclaimers.
30
Q
03ne41
G
0.2
(nC)
Rev. 02 — 16 February 2011
35
T
j
= 175 °C
0.4
0.6
Fig 14. Input, output and reverse transfer capacitances
(pF)
C
0.8
4500
4000
3500
3000
2500
2000
1500
1000
500
T
0
j
as a function of drain-source voltage; typical
values
10
= 25 °C
−2
1.0
V
03ne40
SD
N-channel TrenchMOS logic level FET
(V)
1.2
10
−1
BUK9618-55A
1
C
C
C
iss
oss
rss
10
© NXP B.V. 2011. All rights reserved.
V
DS
03ne47
(V)
10
2
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