BUK754R0-55B NXP Semiconductors, BUK754R0-55B Datasheet - Page 2

• Manufacturer Part Number: BUK754R0-55B
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
BUK754R0-55B
Product data sheet
Pin
1
2
3
mb
Type number
BUK754R0-55B
Symbol Description
G
D
S
D
Pinning information
Ordering information
gate
drain
source
mounting base;
connected to drain
Table 1.
[1]
Package
Name
TO-220AB
Symbol
Avalanche ruggedness
E
Dynamic characteristics
Q
DS(AL)S
GD
Continuous current is limited by package.
Quick reference data
Parameter
non-repetitive
drain-source
avalanche energy
gate-drain charge
Description
plastic single-ended package; heatsink mounted;
1 mounting hole; 3-lead TO-220AB
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 22 April 2011
Simplified outline
SOT78A (TO-220AB)
Conditions
I
R
T
V
V
see
…continued
D
j(init)
GS
DS
GS
= 75 A; V
Figure 13
= 44 V; T
1 2
= 50 Ω; V
= 10 V; I
= 25 °C; unclamped
mb
3
sup
D
j
GS
N-channel TrenchMOS standard level FET
= 25 °C;
= 25 A;
≤ 55 V;
= 10 V;
Graphic symbol
BUK754R0-55B
Min
-
-
mbb076
G
Typ
-
25
© NXP B.V. 2011. All rights reserved.
D
S
Max Unit
1.2
-
Version
SOT78A
J
nC
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