BUK7507-30B NXP Semiconductors, BUK7507-30B Datasheet - Page 7

• Manufacturer Part Number: BUK7507-30B
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK7507-30B
Product data sheet
Fig 5.
Fig 7.
(A)
I
(A)
I
D
10
10
10
10
10
10
D
300
200
100
−1
−2
−3
−4
−5
−6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
20
2
2
4
min
10
9.5
9
8.5
8
7.5
7
6.5
6
5.5
5
4.5
typ
6
4
Label V
max
V
All information provided in this document is subject to legal disclaimers.
GS
8
V
GS
DS
(V)
03nm89
03aa35
(V)
(V)
Rev. 02 — 22 February 2011
10
6
Fig 6.
Fig 8.
R
(mΩ)
DSon
g
(S)
fs
12
10
40
30
20
10
8
6
4
0
of gate-source voltage; typical values
drain current; typical values
Drain-source on-state resistance as a function
Forward transconductance as a function of
5
0
N-channel TrenchMOS standard level FET
25
10
BUK7507-30B
50
15
75
V
© NXP B.V. 2011. All rights reserved.
GS
I
D
(V)
03nm86
(A)
03nk83
100
20
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