BUK7507-30B NXP Semiconductors, BUK7507-30B Datasheet - Page 5

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

BUK7507-30B

Manufacturer Part Number
BUK7507-30B
Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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5. Thermal characteristics
Table 5.
BUK7507-30B
Product data sheet
Symbol
R
R
Fig 4.
th(j-mb)
th(j-a)
Transient thermal impedance from junction to mounting base as a function of pulse duration
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
thermal resistance from junction to
ambient
Z
(K/W)
th(j-mb)
10
10
10
−1
−2
−3
1
10
−6
δ = 0.5
single shot
0.05
0.02
0.2
0.1
10
−5
All information provided in this document is subject to legal disclaimers.
10
Rev. 02 — 22 February 2011
−4
Conditions
see
vertical in still air
10
−3
Figure 4
10
−2
N-channel TrenchMOS standard level FET
P
10
t
−1
p
T
t
p
BUK7507-30B
Min
-
-
(s)
δ =
03nm93
t
T
t
p
1
Typ
-
-
© NXP B.V. 2011. All rights reserved.
60
Max
0.95
Unit
K/W
K/W
5 of 14

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