BAS101_BAS101S NXP Semiconductors, BAS101_BAS101S Datasheet

High-voltage switching diodes, encapsulated in a SOT23 small Surface-MountedDevice (SMD) plastic package

BAS101_BAS101S

Manufacturer Part Number
BAS101_BAS101S
Description
High-voltage switching diodes, encapsulated in a SOT23 small Surface-MountedDevice (SMD) plastic package
Manufacturer
NXP Semiconductors
Datasheet
1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
High-voltage switching diodes, encapsulated in a SOT23 small Surface-Mounted
Device (SMD) plastic package.
Table 1.
Table 2.
[1]
Type number
BAS101
BAS101S
Symbol
Per diode
I
I
V
t
F
R
rr
R
BAS101; BAS101S
High-voltage switching diodes
Rev. 02 — 14 December 2009
High switching speed: t
Low leakage current
Repetitive peak reverse voltage:
V
High-speed switching
High-voltage switching
When switched from I
RRM
≤ 300 V
Product overview
Quick reference data
Parameter
forward current
reverse current
reverse voltage
reverse recovery time
F
= 30 mA to I
Package
NXP
SOT23
SOT23
rr
≤ 50 ns
R
= 30 mA; R
Conditions
V
R
= 250 V
JEITA
-
-
L
= 100 Ω; measured at I
Low capacitance: C
Reverse voltage: V
Small SMD plastic package
Voltage clamping
Reverse polarity protection
[1]
Min
-
-
-
-
Configuration
single
dual series
R
= 3 mA.
Typ
-
-
-
-
Product data sheet
R
d
≤ 300 V
≤ 2 pF
Max
200
150
300
50
Unit
mA
nA
V
ns

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BAS101_BAS101S Summary of contents

Page 1

BAS101; BAS101S High-voltage switching diodes Rev. 02 — 14 December 2009 1. Product profile 1.1 General description High-voltage switching diodes, encapsulated in a SOT23 small Surface-Mounted Device (SMD) plastic package. Table 1. Type number BAS101 BAS101S 1.2 Features High switching ...

Page 2

... Type number BAS101 BAS101S 4. Marking Table 5. Type number BAS101 BAS101S [ made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China BAS101_BAS101S_2 Product data sheet Pinning Description anode not connected cathode anode (diode 1) cathode (diode 2) cathode (diode 1), anode (diode 2) Ordering information Package ...

Page 3

... Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 6. Thermal characteristics Table 7. Symbol Per device R th(j-a) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. BAS101_BAS101S_2 Product data sheet Limiting values Parameter Conditions repetitive peak reverse voltage series connection reverse voltage series connection ...

Page 4

... Per diode V forward voltage F I reverse current R C diode capacitance d t reverse recovery time rr [1] Pulse test: t [2] When switched from I BAS101_BAS101S_2 Product data sheet Characteristics C unless otherwise specified. Conditions I = 100 250 250 MHz R ≤ 300 μs; δ ≤ 0.02. ...

Page 5

... I R (μ −1 10 − 120 V = 300 V R Fig 3. Reverse current as a function of junction temperature; typical values BAS101_BAS101S_2 Product data sheet mhc618 FSM ( (3) − 1.5 V (V) F Based on square wave currents T Fig 2. ...

Page 6

... Package outline SOT23 (TO-236AB) 10. Packing information Table 9. The indicated -xxx are the last three digits of the 12NC ordering code. Type number Package BAS101 BAS101S [1] For further information and the availability of packing methods, see BAS101_BAS101S_2 Product data sheet SAMPLING OSCILLOSCOPE Ω R ...

Page 7

... NXP Semiconductors 11. Soldering Dimensions in mm Fig 7. Reflow soldering footprint SOT23 (TO-236AB) 4.60 4.00 Dimensions in mm Fig 8. Wave soldering footprint SOT23 (TO-236AB) BAS101_BAS101S_2 Product data sheet 2.90 2. 0.85 1.30 3.00 0.85 3 0.50 (3x) 0.60 (3x) 1.00 3.30 3.40 1.20 (2x 1.20 3 2.80 4.50 Rev. 02 — 14 December 2009 BAS101; BAS101S High-voltage switching diodes solder lands solder resist occupied area 2 ...

Page 8

... NXP Semiconductors 12. Mounting PCB thickness = 1.6 mm Fig 9. FR4 PCB, standard footprint SOT23 (TO-236AB) BAS101_BAS101S_2 Product data sheet BAS101; BAS101S 43.4 0.7 0.6 0.6 0.7 Dimensions in mm Rev. 02 — 14 December 2009 High-voltage switching diodes 40 0.5 006aaa527 © NXP B.V. 2009. All rights reserved ...

Page 9

... Table 3 BAS101_BAS101S_1 20060908 BAS101_BAS101S_2 Product data sheet Data sheet status Change notice Product data sheet - “Pinning”: updated Product data sheet - Rev. 02 — 14 December 2009 BAS101; BAS101S High-voltage switching diodes Supersedes BAS101_BAS101S_1 - © NXP B.V. 2009. All rights reserved ...

Page 10

... NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental 15. Contact information For more information, please visit: For sales office addresses, please send an email to: BAS101_BAS101S_2 Product data sheet [3] Definition This document contains data from the objective specification for product development. ...

Page 11

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 14 December 2009 Document identifier: BAS101_BAS101S_2 All rights reserved. ...

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