PMEG3010EH_EJ_ET NXP Semiconductors, PMEG3010EH_EJ_ET Datasheet - Page 4

• Manufacturer Part Number: PMEG3010EH_EJ_ET
• Description: Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with anintegrated guard ring for stress protection, encapsulated in small Surface-MountedDevice (SMD) plastic packages
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Thermal characteristics
7. Characteristics
PMEG3010EH_EJ_ET_4
Product data sheet
Table 7.
[1]
[2]
[3]
[4]
Table 8.
T
[1]
Symbol
R
R
Symbol
V
I
C
R
amb
F
th(j-a)
th(j-sp)
d
For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses P
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
Soldering point of cathode tab.
Pulse test: t
= 25 C unless otherwise specified.
Thermal characteristics
Characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Parameter
forward voltage
reverse current
diode capacitance
p
PMEG3010EH
PMEG3010EJ
PMEG3010ET
PMEG3010EH
PMEG3010EJ
PMEG3010ET
R
300 s;
are a significant part of the total power losses.
Rev. 04 — 20 March 2007
0.02.
1 A very low V
Conditions
in free air
Conditions
I
I
I
I
I
I
V
V
V
f = 1 MHz
F
F
F
F
F
F
R
R
R
= 0.1 mA
= 1 mA
= 10 mA
= 100 mA
= 500 mA
= 1000 mA
= 10 V
= 30 V
= 1 V;
PMEG3010EH/EJ/ET
F
MEGA Schottky barrier rectifiers
[1]
[2]
[3]
[2]
[3]
[2]
[3]
[4]
[1]
Min
-
-
-
-
-
-
-
-
-
Min
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
Typ
90
150
215
285
380
450
12
40
55
© NXP B.V. 2007. All rights reserved.
Max
330
150
350
150
440
300
60
55
120
Max
130
200
250
340
430
560
30
150
70
2
Unit
K/W
K/W
K/W
K/W
K/W
K/W
K/W
K/W
K/W
.
Unit
mV
mV
mV
mV
mV
mV
pF
A
A
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