PMEG3002AELD NXP Semiconductors, PMEG3002AELD Datasheet - Page 7

Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with anintegrated guard ring for stress protection, encapsulated in a SOD882D leadless ultrasmall Surface-Mounted Device (SMD) plastic package with visible and solderable

PMEG3002AELD

Manufacturer Part Number
PMEG3002AELD
Description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with anintegrated guard ring for stress protection, encapsulated in a SOD882D leadless ultrasmall Surface-Mounted Device (SMD) plastic package with visible and solderable
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
PMEG3002AELD
Product data sheet
Fig 7.
Fig 8.
P
F(AV)
(W)
(1) δ = 0.1
(2) δ = 0.2
(3) δ = 0.5
(4) δ = 1
0.15
0.10
0.05
0.00
0.0
f = 1 MHz; T
T
Average forward power dissipation as a
function of average forward current; typical
values
Diode capacitance as a function of reverse voltage; typical values
j
= 150 °C
amb
(1)
0.1
= 25 °C
(2)
(pF)
0.2
(3)
C
d
35
30
25
20
15
10
5
0
I
F(AV)
0
All information provided in this document is subject to legal disclaimers.
006aac587
(A)
(4)
0.3
5
Rev. 1 — 19 April 2011
10
Fig 9.
30 V, 0.2 A low V
P
R(AV)
(W)
(1) δ = 1
(2) δ = 0.9
(3) δ = 0.8
(4) δ = 0.5
0.15
0.10
0.05
0.00
15
0
T
Average reverse power dissipation as a
function of reverse voltage; typical values
j
V
006aac586
= 125 °C
R
(V)
20
PMEG3002AELD
F
10
MEGA Schottky barrier rectifier
(1)
(2)
20
© NXP B.V. 2011. All rights reserved.
V
R
006aac588
(3)
(4)
(V)
30
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