PMEG3002AELD NXP Semiconductors, PMEG3002AELD Datasheet - Page 7
PMEG3002AELD
Manufacturer Part Number
PMEG3002AELD
Description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with anintegrated guard ring for stress protection, encapsulated in a SOD882D leadless ultrasmall Surface-Mounted Device (SMD) plastic package with visible and solderable
Manufacturer
NXP Semiconductors
Datasheet
1.PMEG3002AELD.pdf
(14 pages)
NXP Semiconductors
PMEG3002AELD
Product data sheet
Fig 7.
Fig 8.
P
F(AV)
(W)
(1) δ = 0.1
(2) δ = 0.2
(3) δ = 0.5
(4) δ = 1
0.15
0.10
0.05
0.00
0.0
f = 1 MHz; T
T
Average forward power dissipation as a
function of average forward current; typical
values
Diode capacitance as a function of reverse voltage; typical values
j
= 150 °C
amb
(1)
0.1
= 25 °C
(2)
(pF)
0.2
(3)
C
d
35
30
25
20
15
10
5
0
I
F(AV)
0
All information provided in this document is subject to legal disclaimers.
006aac587
(A)
(4)
0.3
5
Rev. 1 — 19 April 2011
10
Fig 9.
30 V, 0.2 A low V
P
R(AV)
(W)
(1) δ = 1
(2) δ = 0.9
(3) δ = 0.8
(4) δ = 0.5
0.15
0.10
0.05
0.00
15
0
T
Average reverse power dissipation as a
function of reverse voltage; typical values
j
V
006aac586
= 125 °C
R
(V)
20
PMEG3002AELD
F
10
MEGA Schottky barrier rectifier
(1)
(2)
20
© NXP B.V. 2011. All rights reserved.
V
R
006aac588
(3)
(4)
(V)
30
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