PMEG3002AELD NXP Semiconductors, PMEG3002AELD Datasheet - Page 6

• Manufacturer Part Number: PMEG3002AELD
• Description: Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with anintegrated guard ring for stress protection, encapsulated in a SOD882D leadless ultrasmall Surface-Mounted Device (SMD) plastic package with visible and solderable
• Manufacturer: NXP Semiconductors

NXP Semiconductors
7. Characteristics
PMEG3002AELD
Product data sheet
Fig 5.
(A)
I
10
10
10
10
(1) T
(2) T
(3) T
(4) T
(5) T
F
10
–1
–2
–3
–4
1
0.0
Forward current as a function of forward
voltage; typical values
j
j
j
j
j
= 150 °C
= 125 °C
= 85 °C
= 25 °C
= −40 °C
(1)
(2)
(3) (4)
0.2
(5)
Table 7.
T
[1]
[2]
Symbol
V
I
C
t
0.4
R
rr
amb
F
d
Pulse test: t
When switched from I
= 25
0.6
°
C unless otherwise specified.
Characteristics
Parameter
forward voltage
reverse current
diode capacitance
reverse recovery time
p
≤ 300 μs; δ ≤ 0.02.
0.8
All information provided in this document is subject to legal disclaimers.
006aac584
V
F
(V)
F
1.0
= 10 mA to I
Rev. 1 — 19 April 2011
R
= 10 mA; R
V
V
Conditions
I
I
I
I
I
V
Fig 6.
F
F
F
F
F
R
R
R
30 V, 0.2 A low V
= 0.1 mA
= 1 mA
= 10 mA
= 100 mA
= 200 mA
= 10 V
= 30 V
= 1 V; f = 1 MHz
(A)
I
10
10
10
10
10
10
10
10
(1) T
(2) T
(3) T
(4) T
(5) T
R
–1
–2
–3
–4
–5
–6
–7
–8
0
Reverse current as a function of reverse
voltage; typical values
L
j
j
j
j
j
= 100 Ω; measured at I
= 150 °C
= 125 °C
= 85 °C
= 25 °C
= −40 °C
PMEG3002AELD
F
10
[1]
[2]
MEGA Schottky barrier rectifier
Min
-
-
-
-
-
-
-
-
-
R
= 1 mA.
Typ
120
180
250
355
430
3.5
12
18
6
20
(1)
(2)
(3)
(4)
(5)
© NXP B.V. 2011. All rights reserved.
V
R
006aac585
(V)
Max
190
250
300
400
480
10
50
25
-
30
mV
Unit
mV
mV
mV
mV
μA
μA
pF
ns
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