PMEG3002AEL NXP Semiconductors, PMEG3002AEL Datasheet - Page 3

• Manufacturer Part Number: PMEG3002AEL
• Description: Planar Maximum Efficiency General Application (MEGA) Schottky barrier diode with anintegrated guard ring for stress protection encapsulated in a SOD882 leadless ultra smallplastic package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Thermal characteristics
7. Characteristics
PMEG3002AEL_2
Product data sheet
[1]
Table 6.
[1]
[2]
Table 7.
T
[1]
Symbol
R
Symbol
V
I
C
R
amb
F
th(j-a)
d
For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse
power losses P
power losses P
Refer to SOD882 standard mounting conditions (footprint), FR4 with 60 μm copper strip line.
For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse
power losses P
power losses P
Pulse test: t
= 25
°
C unless otherwise specified.
Parameter
continuous forward
voltage
continuous reverse
current
diode capacitance
Thermal characteristics
Characteristics
Parameter
thermal resistance from junction to
ambient
p
≤ 300 μs; δ ≤ 0.02.
R
R
R
R
are a significant part of the total power losses. Nomograms for determining the reverse
and I
are a significant part of the total power losses. Nomograms for determining the reverse
and I
F(AV)
F(AV)
Rev. 02 — 15 January 2010
rating will be available on request.
rating will be available on request.
V
Conditions
see
see
see
R
I
I
I
I
I
V
V
F
F
F
F
F
= 1 V; f = 1 MHz;
R
R
Figure
Figure
Figure 3
= 0.1 mA
= 1 mA
= 10 mA
= 100 mA
= 200 mA
= 10 V
= 30 V
0.2 A very low V
1;
2;
Conditions
in free air
[1]
F
MEGA Schottky barrier rectifier
PMEG3002AEL
Min
-
-
-
-
-
-
-
-
[1][2]
Typ
125
185
250
350
420
2.5
10
17
Typ
500
© NXP B.V. 2010. All rights reserved.
Max
190
250
300
400
480
10
50
25
Unit
K/W
Unit
mV
mV
mV
mV
mV
μA
μA
pF
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