PMEG3002AEL NXP Semiconductors, PMEG3002AEL Datasheet

Planar Maximum Efficiency General Application (MEGA) Schottky barrier diode with anintegrated guard ring for stress protection encapsulated in a SOD882 leadless ultra smallplastic package

PMEG3002AEL

Manufacturer Part Number
PMEG3002AEL
Description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier diode with anintegrated guard ring for stress protection encapsulated in a SOD882 leadless ultra smallplastic package
Manufacturer
NXP Semiconductors
Datasheet

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1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
Planar Maximum Efficiency General Application (MEGA) Schottky barrier diode with an
integrated guard ring for stress protection encapsulated in a SOD882 leadless ultra small
plastic package.
Table 1.
Symbol
I
V
F
R
PMEG3002AEL
30 V, 0.2 A very low V
leadless ultra small SOD882 package
Rev. 02 — 15 January 2010
Forward current: 0.2 A
Reverse voltage: 30 V
Very low forward voltage
Leadless ultra small plastic package
Power dissipation comparable to SOT23
Ultra high-speed switching
Voltage clamping
Protection circuits
Low voltage rectification
High efficiency DC-to-DC conversion
Low power consumption applications
Quick reference data
Parameter
forward current
reverse voltage
F
MEGA Schottky barrier rectifier in
Conditions
Min
-
-
Typ
-
-
Product data sheet
30
Max
0.2
Unit
A
V

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PMEG3002AEL Summary of contents

Page 1

... PMEG3002AEL 30 V, 0.2 A very low V leadless ultra small SOD882 package Rev. 02 — 15 January 2010 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier diode with an integrated guard ring for stress protection encapsulated in a SOD882 leadless ultra small plastic package. ...

Page 2

... Marking Limiting values Conditions ≤ 1 ms; δ ≤ 0. square p wave Rev. 02 — 15 January 2010 PMEG3002AEL MEGA Schottky barrier rectifier F Simplified outline Symbol [ sym001 Bottom view Top view 001aaa332 ...

Page 3

... Figure 2; current diode capacitance MHz; R see Figure 3 ≤ 300 μs; δ ≤ 0.02. p Rev. 02 — 15 January 2010 PMEG3002AEL MEGA Schottky barrier rectifier F Conditions Typ Unit [1][2] in free air 500 K/W Min Typ Max - 125 190 - 185 250 ...

Page 4

... V (V) F (1) T (2) T (3) T (4) T Fig (pF Rev. 02 — 15 January 2010 PMEG3002AEL MEGA Schottky barrier rectifier F 001aaa352 (1) (2) ( 150 ° 125 ° ° °C j Reverse current as a function of reverse voltage ...

Page 5

... Package outline PMEG3002AEL_2 Product data sheet 0.2 A very low 0.30 0.65 0.22 REFERENCES JEDEC JEITA Rev. 02 — 15 January 2010 PMEG3002AEL MEGA Schottky barrier rectifier scale EUROPEAN ISSUE DATE PROJECTION 03-04-16 03-04-17 © NXP B.V. 2010. All rights reserved. SOD882 ...

Page 6

... No changes were made to the technical content. PMEG3002AEL_1 20040224 PMEG3002AEL_2 Product data sheet 0.2 A very low V F Data sheet status Change notice Product data sheet - Product data - Rev. 02 — 15 January 2010 PMEG3002AEL MEGA Schottky barrier rectifier Supersedes PMEG3002AEL_1 - © NXP B.V. 2010. All rights reserved ...

Page 7

... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev. 02 — 15 January 2010 PMEG3002AEL MEGA Schottky barrier rectifier F © NXP B.V. 2010. All rights reserved ...

Page 8

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: PMEG3002AEL_2 All rights reserved. Date of release: 15 January 2010 ...

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