BYW29EX-200 NXP Semiconductors, BYW29EX-200 Datasheet - Page 3

• Manufacturer Part Number: BYW29EX-200
• Description: Ultrafast power diode in a SOD113 (2-lead TO-220F) plastic package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
ESD LIMITING VALUE
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
THERMAL RESISTANCES
STATIC CHARACTERISTICS
T
DYNAMIC CHARACTERISTICS
T
October 1998
Rectifier diodes
ultrafast, rugged
SYMBOL PARAMETER
V
hs
SYMBOL
V
C
SYMBOL PARAMETER
R
R
j
SYMBOL PARAMETER
V
I
j
SYMBOL PARAMETER
Q
t
t
V
R
rr1
rr2
= 25 ˚C unless otherwise stated
= 25 ˚C unless otherwise stated
C
isol
F
fr
isol
th j-hs
th j-a
s
= 25 ˚C unless otherwise specified
Electrostatic discharge
capacitor voltage
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
Forward voltage
Reverse current
Reverse recovery charge
Reverse recovery time
Reverse recovery time
Forward recovery voltage
PARAMETER
R.M.S. isolation voltage from
both terminals to external
heatsink
Capacitance from both terminals f = 1 MHz
to external heatsink
CONDITIONS
Human body model;
C = 250 pF; R = 1.5 kΩ
CONDITIONS
with heatsink compound
without heatsink compound
in free air
CONDITIONS
I
I
I
V
V
CONDITIONS
I
I
-dI
I
I
F
F
F
F
F
F
F
CONDITIONS
f = 50-60 Hz; sinusoidal
waveform;
R.H. ≤ 65% ; clean and dustfree
R
R
= 8 A; T
= 8 A
= 20 A
= 2 A; V
= 1 A; V
= 0.5 A to I
= 1 A; dI
F
= V
= V
/dt = 100 A/µs
RWM
RWM
; T
j
R
R
F
2
= 150˚C
/dt = 10 A/µs
≥ 30 V; -dI
≥ 30 V;
j
R
= 100 ˚C
= 1 A; I
rec
F
/dt = 20 A/µs
= 0.25 A
MIN.
MIN.
MIN.
MIN.
-
-
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
BYW29EX series
TYP.
TYP.
TYP.
TYP.
0.80
0.92
10
1.1
0.2
55
20
15
2
4
1
-
-
Product specification
MAX.
MAX.
MAX.
MAX.
0.895
MAX.
2500
8
1.05
5.5
7.2
1.3
0.6
10
11
25
20
-
-
-
Rev 1.200
UNIT
UNIT
UNIT
UNIT
UNIT
K/W
K/W
K/W
mA
pF
µA
nC
kV
ns
ns
V
V
V
V
V