BYW29EX-200 NXP Semiconductors, BYW29EX-200 Datasheet - Page 2

• Manufacturer Part Number: BYW29EX-200
• Description: Ultrafast power diode in a SOD113 (2-lead TO-220F) plastic package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
GENERAL DESCRIPTION
Glass passivated
diodes in a full pack plastic envelope,
featuring low forward voltage drop,
ultra-fast recovery times, soft recovery
characteristic and guaranteed reverse
surge and ESD capability. They are
intended for use in switched mode power
supplies and high frequency circuits in
general where low conduction and
switching losses are essential.
PINNING - SOD113
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
1 Neglecting switching and reverse current losses
October 1998
Rectifier diodes
ultrafast, rugged
SYMBOL PARAMETER
V
V
V
I
I
I
I
I
I
I
T
T
F(AV)
F(RMS)
FRM
FSM
2
RRM
RSM
case isolated
PIN
t
stg
j
RRM
RWM
R
1
2
cathode
anode
Repetitive peak reverse voltage
Crest working reverse voltage
Continuous reverse voltage
Average forward current
RMS forward current
Repetitive peak forward current t = 25 µs; δ = 0.5;
Non-repetitive peak forward
current
I
Repetitive peak reverse current t
Non-repetitive peak reverse
current
Storage temperature
Operating junction temperature
2
DESCRIPTION
t for fusing
epitaxial
rectifier
1
QUICK REFERENCE DATA
PIN CONFIGURATION
SYMBOL
V
V
I
t
I
F(AV)
rr
RRM
CONDITIONS
square wave; δ = 0.5;
T
sinusoidal; a = 1.57;
T
T
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied
V
t = 10 ms
t
RRM
F
p
p
hs
hs
hs
RWM(max)
= 2 µs; δ = 0.001
= 100 µs
≤ 106 ˚C
≤ 109 ˚C
≤ 106 ˚C
case
1
1
PARAMETER
Repetitive peak reverse
voltage
Forward voltage
Forward current
Reverse recovery time
Repetitive peak reverse
current
2
BYW29EX-
MIN.
-40
-
-
-
-
-
-
-
-
-
-
-
-
-
SYMBOL
-150
150
150
150
k
1
MAX.
0.895
BYW29EX series
150
150
0.2
25
Product specification
8
MAX.
11.3
150
150
7.3
0.2
0.2
16
80
88
32
8
-200
MAX.
0.895
200
200
200
200
200
0.2
25
8
Rev 1.200
a
2
UNIT
UNIT
A
ns
˚C
˚C
V
V
A
A
V
V
V
A
A
A
A
A
A
A
A
2
s