BT169D-L NXP Semiconductors, BT169D-L Datasheet - Page 6

• Manufacturer Part Number: BT169D-L
• Description: Planar passivated very sensitive gate Silicon Controlled Rectifier in a SOT54 (TO-92) plastic package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Characteristics
Table 6.
BT169D-L
Product data sheet
Symbol
Static characteristics
I
I
I
V
V
I
I
Dynamic characteristics
dV
GT
L
H
D
R
Fig 7.
T
GT
I
D
GT(25 C)
/dt
I
GT
3
2
1
0
junction temperature
Normalized gate trigger current as a function of
50
Characteristics
Parameter
gate trigger current
latching current
holding current
on-state voltage
gate trigger voltage
off-state current
reverse current
rate of rise of off-state voltage V
0
50
100
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001aab502
T
j
( C)
Conditions
V
see
V
see
V
I
V
see
V
see
V
V
T
T
exponential waveform; see
V
waveform; gate open circuit;
see
T
j
j
D
D
D
D
D
D
D
DM
DM
= 1.2 A; T
= 125 °C; R
= 25 °C; R
Rev. 5 — 10 November 2011
= 12 V; I
= 12 V; I
= 12 V; T
= 12 V; I
= 12 V; I
= 400 V; T
= 400 V; T
150
Figure 7
Figure 8
Figure 11
Figure 11
Figure 12
= 268 V; T
= 268 V; T
T
G
T
T
j
j
GK
= 25 °C; see
= 10 mA; T
= 10 mA; T
= 10 mA; T
= 25 °C; see
= 0.5 mA; T
j
j
GK
= 125 °C; R
= 25 °C; R
j
j
= 1 kΩ; V
= 125 °C; R
= 125 °C; exponential
= 1 kΩ; V
Fig 8.
I
L(25 C)
I
L(Tj)
j
j
j
3
2
1
0
GK
j
R
= 25 °C;
= 25 °C;
= 125 °C;
-50
junction temperature
Figure 10
Normalized latching current as a function of
= 25 °C;
GK
Figure 9
R
= 400 V
Figure 12
GK
= 1 kΩ
= 400 V
= 1 kΩ
= 1 kΩ;
0
Min
-
-
-
-
-
0.2
-
-
-
-
500
-
50
Typ
-
2
0.4
1.25
0.5
0.3
0.05
-
0.05
-
800
25
BT169D-L
100
© NXP B.V. 2011. All rights reserved.
003aag891
T
j
(°C)
Max
50
4
1
1.7
0.8
-
0.1
2
0.1
2
-
-
150
Unit
µA
mA
mA
V
V
V
mA
µA
mA
µA
V/s
V/µs
6 of 12
SCR