BT169D NXP Semiconductors, BT169D Datasheet

SCRs BULK SCR

BT169D

Manufacturer Part Number
BT169D
Description
SCRs BULK SCR
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BT169D

Breakover Current Ibo Max
9 A
Rated Repetitive Off-state Voltage Vdrm
400 V
Off-state Leakage Current @ Vdrm Idrm
0.1 mA
Forward Voltage Drop
1.7 V
Gate Trigger Voltage (vgt)
0.8 V
Maximum Gate Peak Inverse Voltage
5 V
Gate Trigger Current (igt)
0.2 mA
Holding Current (ih Max)
5 mA
Mounting Style
SMD/SMT
Package / Case
SOT-54
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BT169D,112

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1. Product profile
2. Pinning information
Table 1:
Pin
1
2
3
Discrete pinning
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
Description
anode (a)
gate (g)
cathode (k)
Passivated, sensitive gate thyristors in a SOT54 plastic package.
BT169 series
Thyristors logic level
Rev. 04 — 23 August 2004
Designed to be interfaced directly to microcontrollers, logic integrated circuits and
other low power gate trigger circuits.
General purpose switching and phase control applications.
V
V
V
DRM
DRM
DRM
, V
, V
, V
RRM
RRM
RRM
200 V (BT169B)
400 V (BT169D)
600 V (BT169G)
Simplified outline
SOT54 (TO-92)
I
I
I
T(RMS)
T(AV)
TSM
3
2
1
8 A.
0.5 A
0.8 A
Product data sheet
Symbol
sym037

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BT169D Summary of contents

Page 1

... Quick reference data V DRM V DRM V DRM 2. Pinning information Table 1: Discrete pinning Pin Description 1 anode (a) 2 gate (g) 3 cathode ( 200 V (BT169B) RRM , V 400 V (BT169D) RRM , V 600 V (BT169G) RRM Product data sheet I 0.8 A T(RMS) I 0.5 A T(AV TSM Simplified outline Symbol SOT54 (TO-92) sym037 ...

Page 2

... BT169B - BT169D BT169G 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter repetitive peak off-state voltages DRM RRM BT169B BT169D BT169G I average on-state current T(AV) I RMS on-state current T(RMS) I non-repetitive peak on-state current TSM ...

Page 3

Philips Semiconductors 0.8 P tot (W) 0.6 0 form factor = I /I T(RMS) T(AV) Fig 1. Total power dissipation as a function of average on-state current; maximum values TSM (A) 8 ...

Page 4

Philips Semiconductors TSM ( ms. p Fig 3. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values T(RMS) (A) 1.5 1 ...

Page 5

Philips Semiconductors 5. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter R thermal resistance from junction to th(j-lead) lead R thermal resistance from junction to th(j-a) ambient th(j-lead) (K/ ...

Page 6

Philips Semiconductors 6. Characteristics Table 5: Characteristics unless otherwise stated. j Symbol Parameter Static characteristics I gate trigger current GT I latching current L I holding current H V on-state voltage T V gate trigger voltage ...

Page 7

Philips Semiconductors 1.6 V GT(Tj) V GT(25 C) 1.2 0.8 0 Fig 7. Normalized gate trigger voltage as a function of junction temperature ( (1) (2) (3) 0 0.4 1.2 ...

Page 8

Philips Semiconductors 3 I H(Tj Fig 11. Normalized holding current as a function of junction temperature. 7. Package information Epoxy meets requirements of UL94 V-0 ...

Page 9

Philips Semiconductors 8. Package outline Plastic single-ended leaded (through hole) package; 3 leads DIMENSIONS (mm are the original dimensions) UNIT 5.2 0.48 0.66 0.45 mm 5.0 0.40 ...

Page 10

Philips Semiconductors 9. Revision history Table 6: Revision history Document ID Release date BT169_SERIES_4 20040823 • Modifications: The format of this data sheet has been redesigned to comply with the new presentation and information standard of Philips Semiconductors. • Section ...

Page 11

Philips Semiconductors 10. Data sheet status [1] Level Data sheet status Product status I Objective data Development II Preliminary data Qualification III Product data Production [1] Please consult the most recently issued data sheet before initiating or completing a design. ...

Page 12

Philips Semiconductors 14. Contents 1 Product profi 1.1 General description ...

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