BTA312B-800ET NXP Semiconductors, BTA312B-800ET Datasheet - Page 2

Planar passivated high commutation three quadrant triac in a SOT404 (D2PAK) surface mountable plastic package

BTA312B-800ET

Manufacturer Part Number
BTA312B-800ET
Description
Planar passivated high commutation three quadrant triac in a SOT404 (D2PAK) surface mountable plastic package
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
3. Ordering information
Table 2.
4. Limiting values
Table 3.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
BTA312B_SER_CT_ET_1
Product data sheet
Type number
BTA312B-600CT D2PAK
BTA312B-800ET
Symbol
V
I
I
I
dI
I
P
P
T
T
T(RMS)
TSM
2
GM
stg
j
DRM
t
GM
G(AV)
T
/dt
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The
rate of rise of current should not exceed 15 A/ s.
Ordering information
Limiting values
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state current
I
rate of rise of on-state current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
2
t for fusing
Package
Name
Description
plastic single-ended surface-mounted package (D2PAK); 3-leads (one lead
cropped)
12 A Three-quadrant triacs high commutation high temperature
Rev. 01 — 11 April 2007
Conditions
BTA312B-600CT
BTA312B-800ET
full sine wave; T
Figure 4
full sine wave; T
surge; see
t = 10 ms
I
dI
over any 20 ms period
TM
G
t = 20 ms
t = 16.7 ms
/dt = 0.2 A/ s
= 20 A; I
BTA312B series CT and ET
and
Figure 2
G
5
= 0.2 A;
mb
j
= 25 C prior to
and
126 C; see
3
[1]
Min
-
-
-
-
-
-
-
-
-
-
-
40
© NXP B.V. 2007. All rights reserved.
Max
600
800
12
95
105
45
100
2
5
0.5
+150
150
Version
SOT404
Unit
V
V
A
A
A
A
A/ s
A
W
W
C
C
2
s
2 of 12

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