BTA312B-800ET NXP Semiconductors, BTA312B-800ET Datasheet - Page 2
BTA312B-800ET
Manufacturer Part Number
BTA312B-800ET
Description
Planar passivated high commutation three quadrant triac in a SOT404 (D2PAK) surface mountable plastic package
Manufacturer
NXP Semiconductors
Datasheet
1.BTA312B-800ET.pdf
(12 pages)
NXP Semiconductors
3. Ordering information
Table 2.
4. Limiting values
Table 3.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
BTA312B_SER_CT_ET_1
Product data sheet
Type number
BTA312B-600CT D2PAK
BTA312B-800ET
Symbol
V
I
I
I
dI
I
P
P
T
T
T(RMS)
TSM
2
GM
stg
j
DRM
t
GM
G(AV)
T
/dt
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The
rate of rise of current should not exceed 15 A/ s.
Ordering information
Limiting values
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state current
I
rate of rise of on-state current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
2
t for fusing
Package
Name
Description
plastic single-ended surface-mounted package (D2PAK); 3-leads (one lead
cropped)
12 A Three-quadrant triacs high commutation high temperature
Rev. 01 — 11 April 2007
Conditions
BTA312B-600CT
BTA312B-800ET
full sine wave; T
Figure 4
full sine wave; T
surge; see
t = 10 ms
I
dI
over any 20 ms period
TM
G
t = 20 ms
t = 16.7 ms
/dt = 0.2 A/ s
= 20 A; I
BTA312B series CT and ET
and
Figure 2
G
5
= 0.2 A;
mb
j
= 25 C prior to
and
126 C; see
3
[1]
Min
-
-
-
-
-
-
-
-
-
-
-
40
© NXP B.V. 2007. All rights reserved.
Max
600
800
12
95
105
45
100
2
5
0.5
+150
150
Version
SOT404
Unit
V
V
A
A
A
A
A/ s
A
W
W
C
C
2
s
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