HA5024IBZ Intersil, HA5024IBZ Datasheet - Page 16

IC OPAMP QUAD 125MHZ 20-SOIC

HA5024IBZ

Manufacturer Part Number
HA5024IBZ
Description
IC OPAMP QUAD 125MHZ 20-SOIC
Manufacturer
Intersil
Datasheet

Specifications of HA5024IBZ

Applications
Current Feedback
Number Of Circuits
4
-3db Bandwidth
125MHz
Slew Rate
350 V/µs
Current - Supply
7.5mA
Current - Output / Channel
20mA
Voltage - Supply, Single/dual (±)
±4.5 V ~ 18 V
Mounting Type
Surface Mount
Package / Case
20-SOIC (0.300", 7.50mm Width)
Peak Reflow Compatible (260 C)
Yes
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HA5024IBZ
Manufacturer:
INFTEL
Quantity:
20 000
Die Characteristics
DIE DIMENSIONS:
METALLIZATION:
SUBSTRATE POTENTIAL (Powered Up):
Metallization Mask Layout
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
2680µm x 2600µm x 483µm
Type: Metal 1: AlCu (1%)
Thickness: Metal 1: 8k
Type: Metal 2: AlCu (1%)
Thickness: Metal 2: 16k
V-
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
DIS1
DIS2
For information regarding Intersil Corporation and its products, see www.intersil.com
+IN1
+IN2
V+
Å
Å
±0.4k
16
±0.8k
3
4
6
7
8
Å
Å
-IN1
-IN2
9
2
OUT1
OUT2
10
1
HA5024
HA5024
OUT4
OUT3
PASSIVATION:
TRANSISTOR COUNT:
PROCESS:
20
11
Type: Nitride
Thickness: 4k
248
High Frequency Bipolar Dielectric Isolation
-IN4
-IN3
19
12
Å
±0.4k
Å
18
17
15
14
13
+IN4
DIS4
V-
DIS3
+IN3
February 8, 2006
3550.6

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