MG200Q2YS65H TOSHIBA Semiconductor CORPORATION, MG200Q2YS65H Datasheet - Page 4

• Manufacturer Part Number: MG200Q2YS65H
• Manufacturer: TOSHIBA Semiconductor CORPORATION

0.01
0.01
100
0.1
0.1
0.1
10
1
1
1
10
10
1
Common emitter
V CC = 600 V
V GE = ±15 V
R G = 4.7 W
: Tc = 25°C
: Tc = 125°C
: Tc = 25°C
: Tc = 125°C
: Tc = 25°C
: Tc = 125°C
Gate resistance R
Collector current I
Collector current I
Switching time – R
Switching time – I
Switching loss – I
100
100
10
t d (on)
G
C
E on
C
E dsw
C
E off
C
Common emitter
V CC = 600 V
V GE = ±15 V
R G = 4.7 W
G
Common emitter
V CC = 600 V
I C = 200 A
V GE = ±15 V
(A)
(9)
(A)
t r
t on
t on
t d (on)
t r
1000
1000
100
4
1000
0.01
0.01
100
0.1
0.1
10
10
1
1
1
10
1
1
Common emitter
V CC = 600 V
I C = 200 A
V GE = ±15 V
Common emitter
V CC = 600 V
V GE = ±15 V
R G = 4.7 W
Common emitter
V CC = 600 V
I C = 200 A
V GE = ±15 V
: Tc = 25°C
: Tc = 125°C
: Tc = 25°C
: Tc = 125°C
Gate resistance R
Gate resistance R
Collector current I
Switching time – R
Switching loss – R
Switching time – I
t d (off)
t off
t off
100
10
10
MG200Q2YS65H
G
G
C
E on
C
t d (off)
G
G
t f
(A)
(9)
(9)
: Tc = 25°C
: Tc = 125°C
E off
E dsw
t f
2002-10-04
1000
100
100