MG200Q2YS65H TOSHIBA Semiconductor CORPORATION, MG200Q2YS65H Datasheet - Page 3

• Manufacturer Part Number: MG200Q2YS65H
• Manufacturer: TOSHIBA Semiconductor CORPORATION

400
300
200
100
200
150
100
16
12
50
0
8
4
0
0
0
0
0
Common emitter
V CE = 5 V
Collector-emitter voltage V
Gate-emitter voltage V
Gate-emitter voltage V
2
4
18 V
4
20 V
Tc = 125°C
25°C
I
C
V
4
8
I
– V
CE
C
12 V
– V
– V
CE (sat)
15 V
8
GE
-40°C
GE
12
6
I C = 400 A
200 A
Common emitter
Tc = 25°C
Common emitter
Tc = 25°C
100 A
GE
GE
V GE = 8 V
CE
12
P C = 1310 W
(V)
(V)
10 V
16
8
(V)
10
20
16
3
400
300
200
100
400
300
200
100
16
12
0
8
4
0
0
0
0
0
Common cathode
V GE = 0
Collector-emitter voltage V
Gate-emitter voltage V
2
4
1
Forward voltage V
Tc = 125°C
18 V
I
C
V
20 V
4
8
– V
CE
I
F
25°C
– V
– V
CE (sat)
2
F
GE
12
MG200Q2YS65H
6
12 V
15 V
F
GE
Common emitter
Tc = 125°C
Common emitter
Tc = 125°C
V GE = 8 V
CE
(V)
I C = 400 A
3
(V)
200 A
100 A
10 V
16
8
(V)
2002-10-04
10
20
4