ADA4938-1ACPZ-R2 Analog Devices Inc, ADA4938-1ACPZ-R2 Datasheet - Page 7

IC ADC DRIVER DIFF 16-LFCSP

ADA4938-1ACPZ-R2

Manufacturer Part Number
ADA4938-1ACPZ-R2
Description
IC ADC DRIVER DIFF 16-LFCSP
Manufacturer
Analog Devices Inc
Type
ADC Driverr
Datasheet

Specifications of ADA4938-1ACPZ-R2

Applications
Data Acquisition
Mounting Type
Surface Mount
Package / Case
16-LFCSP
No. Of Amplifiers
1
Input Offset Voltage
4mV
Gain Db Max
1.05dB
Bandwidth
1GHz
Slew Rate
4700V/µs
Supply Voltage Range
4.5V To 11V
Supply Current
37mA
Amplifier Case Style
LFCSP
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
ABSOLUTE MAXIMUM RATINGS
Table 5.
Parameter
Supply Voltage
Power Dissipation
Storage Temperature Range
Operating Temperature Range
Lead Temperature (Soldering, 10 sec)
Junction Temperature
Stresses above those listed under Absolute Maximum Rating
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL RESISTANCE
θ
to a high thermal conductivity 4-layer circuit board, as described in
EIA/JESD 51-7. The exposed pad is not electrically connected to
the device. It is typically soldered to a pad on the PCB that is
thermally and electrically connected to an internal ground plane.
Table 6. Thermal Resistance
Package Type
16-Lead LFCSP (Exposed Pad)
24-Lead LFCSP (Exposed Pad)
Maximum Power Dissipation
The maximum safe power dissipation in the ADA4938-x
packages is limited by the associated rise in junction temper-
ature (T
transition temperature, the plastic changes its properties. Even
temporarily exceeding this temperature limit can change the
stresses that the package exerts on the die, permanently shifting
the parametric performance of the ADA4938. Exceeding a junction
temperature of 150°C for an extended period can result in changes
in the silicon devices, potentially causing failure.
JA
is specified for the device (including exposed pad) soldered
J
) on the die. At approximately 150°C, which is the glass
θ
95
65
JA
Rating
12 V
See Figure 4
−65°C to +125°C
−40°C to +85°C
300°C
150°C
Unit
°C/W
°C/W
Rev. A | Page 7 of 28
The power dissipated in the package (P
quiescent power dissipation and the power dissipated in the
package due to the load drive. The quiescent power is the voltage
between the supply pins (V
The power dissipated due to the load drive depends upon the
particular application. The power due to load drive is calculated
by multiplying the load current by the associated voltage drop
across the device. RMS voltages and currents must be used in
these calculations.
Airflow increases heat dissipation, which effectively reducing
θ
leads/exposed pad from metal traces, through-holes, ground,
and power planes reduces the θ
Figure 4 shows the maximum safe power dissipation in the
package vs. the ambient temperature for the ADA4938-1,
16-lead LFCSP (95°C/W) and the ADA4938-2, 24-lead LFCSP
(65°C/W) on a JEDEC standard 4-layer board.
ESD CAUTION
JA
. In addition, more metal directly in contact with the package
Figure 4. Maximum Power Dissipation vs. Temperature, 4-Layer Board
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
–40 –30 –20 –10
AMBIENT TEMPERATURE (°C)
ADA4938-1
0
S
10
ADA4938-1/ADA4938-2
) times the quiescent current (I
ADA4938-2
20
JA
.
30
40
D
) is the sum of the
50
60
70
80
90
S
).

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