AUIRLR3114Z International Rectifier, AUIRLR3114Z Datasheet - Page 6

• Manufacturer Part Number: AUIRLR3114Z
• Description: MOSFET Power
• Manufacturer: International Rectifier

Specifications of AUIRLR3114Z

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 6.5 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 130 A
• Power Dissipation: 140 W
• Mounting Style: SMD/SMT
• Package / Case: DPAK
• Gate Charge Qg: 40 nC
• Lead Free Status / Rohs Status: Details

6
140
120
100
80
60
40
20
0
Fig 9. Maximum Drain Current vs.
25
0.001
0.01
0.1
10
1E-006
1
50
Case Temperature
T C , Case Temperature (°C)
D = 0.50
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.01
75
0.02
0.20
0.10
0.05
SINGLE PULSE
( THERMAL RESPONSE )
100
Limited By Package
1E-005
125
150
175
t 1 , Rectangular Pulse Duration (sec)
0.0001
τ
J
τ
J
τ
1
Ci= τi/Ri
τ
1
Ci
i/Ri
R
1
R
1
τ
0.001
2
τ
R
2
2
R
2
2.0
1.5
1.0
0.5
R
τ
3
3
R
-60 -40 -20 0 20 40 60 80 100120140160180
τ
3
3
I D = 42A
V GS = 10V
Fig 10. Normalized On-Resistance
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
τ
R
4
τ
4
R
4
4
T J , Junction Temperature (°C)
τ
C
τ
0.01
Ri (°C/W) τi (sec)
0.0350
0.2433
0.4851
0.2867
vs. Temperature
0.000013
0.000077
0.001043
0.004658
0.1
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