AUIRLR3114Z International Rectifier, AUIRLR3114Z Datasheet

AUIRLR3114Z

Manufacturer Part Number

AUIRLR3114Z

Description

MOSFET Power

Manufacturer

International Rectifier

Datasheet

1.AUIRLU3114Z.pdf (14 pages)

Specifications of AUIRLR3114Z

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

6.5 mOhms

Drain-source Breakdown Voltage

40 V

Gate-source Breakdown Voltage

16 V

Continuous Drain Current

130 A

Power Dissipation

140 W

Mounting Style

SMD/SMT

Package / Case

DPAK

Gate Charge Qg

40 nC

Lead Free Status / Rohs Status

Details

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

AUIRLR3114Z

Manufacturer:

Quantity:

12 500

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Features

Description

HEXFET

*Qualification standards can be found at http://www.irf.com/

Specifically designed for Automotive applications, this

HEXFET

techniques to achieve extremely low on-resistance per

silicon area. Additional features of this design are a 175°C

junction operating temperature, fast switching speed and

improved repetitive avalanche rating . These features com-

bine to make this design an extremely efficient and reliable

device for use in Automotive applications and a wide variety

of other applications.

Absolute Maximum Ratings

is not implied.

Thermal Resistance

STG

AS (Thermally limited)

θJC

θJA

@ T

Advanced Process Technology

Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Logic Level

Lead-Free, RoHS Compliant

Automotive Qualified *

(Tested )

= 25°C

= 100°C

= 25°C

is a registered trademark of International Rectifier.

Power MOSFET utilizes the latest processing

functional operation of the device at these or any other condition beyond those indicated in the specifications

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Single Pulse Avalanche Energy Tested Value

Avalanche Current

Repetitive Avalanche Energy

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Junction-to-Case

Junction-to-Ambient (PCB mount)

Junction-to-Ambient

AUTOMOTIVE GRADE

Parameter

@ 10V (Silicon Limited)

@ 10V (Package Limited)

Gate

D (Silicon Limited)

D (Package Limited)

AUIRLR3114Z

DSS

DS(on)

Typ.

D-Pak

–––

See Fig.12a, 12b, 15, 16

300(1.6mm from case)

max @ 10V

-55 to + 175

max @ 4.5V

HEXFET

130

Drain

Max.

0.95

500

140

130

260

±16

AUIRLU3114Z

AUIRLR3114Z

AUIRLU3114Z

Max.

1.05

110

I-Pak

Power MOSFET

Source

130A

4.9mΩ

6.5mΩ

40V

42A

PD - 96381

Units

W/°C

°C/W

°C

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