AUIRF7342Q International Rectifier, AUIRF7342Q Datasheet - Page 2

• Manufacturer Part Number: AUIRF7342Q
• Description: MOSFET Power
• Manufacturer: International Rectifier

Specifications of AUIRF7342Q

• Configuration: Dual
• Transistor Polarity: Dual P-Channel
• Drain-source Breakdown Voltage: - 55 V
• Continuous Drain Current: - 3.4 A
• Power Dissipation: 2 W
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8
• Gate Charge Qg: 26 nC
• Lead Free Status / Rohs Status: Details

AUIRF7342Q
Notes:

‚
ƒ
Static Electrical Characteristics @ T
V
ΔV
R
V
gfs
I
I
Dynamic Electrical Characteristics @ T
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
(BR)DSS
GS(th)
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
R
I
T
SD
(BR)DSS
J
G
≤ 150°C.
= 25Ω, I
≤ -3.4A, di/dt ≤ -150A/μs, V
/ΔT
J
2
= 25°C, L = 20mH,
AS
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
= -3.4A. (See Figure 8)
Parameter
Parameter
Parameter
DD
™
≤ V
(BR)DSS
,
J
= 25°C (unless otherwise specified)
J
= 25°C (unless otherwise specified)
Min.
Min.
Min.
-1.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
-55
3.3
„
…
-0.054
0.095
0.150
Pulse width ≤ 300μs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t<10 sec.
Typ.
Typ.
Typ.
–––
–––
–––
–––
–––
–––
–––
690
210
–––
–––
–––
3.0
8.4
26
14
10
43
22
86
54
85
0.105
0.170
Max. Units
Max. Units
Max. Units
-100
–––
–––
-3.0
–––
-2.0
100
–––
–––
–––
-2.0
-1.2
130
-25
4.5
-27
38
13
22
15
64
32
80
V/°C
μA
nA
nC
nC
ns
pF
ns
Ω
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0MHz, See Fig. 9
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/μs
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= -3.1A
= -1.0A
= 25°C, I
= 25°C,I
= 16Ω
= 6.0Ω
= V
= -10V, I
= -55V, V
= -55V, V
= -44V
= -25V
= 0V, I
= -10V, I
= -4.5V, I
= -20V
= 20V
= -10V, See Fig. 10
= -28V
= 0V
GS
, I
f
D
Conditions
Conditions
Conditions
F
S
D
= -2.0A
= -250μA
D
D
www.irf.com
= -2.0A, V
= -250μA
D
GS
GS
= -3.4A
= -3.1A
= -2.7A
e
= 0V
= 0V, T
D
G
= -1mA
f
f
GS
J
f
= 55°C
= 0V
D
S
e