AUIRF7342Q International Rectifier, AUIRF7342Q Datasheet

AUIRF7342Q

Manufacturer Part Number

AUIRF7342Q

Description

MOSFET Power

Manufacturer

International Rectifier

Datasheet

1.AUIRF7342Q.pdf (11 pages)

Specifications of AUIRF7342Q

Configuration

Dual

Transistor Polarity

Dual P-Channel

Drain-source Breakdown Voltage

- 55 V

Continuous Drain Current

- 3.4 A

Power Dissipation

2 W

Mounting Style

SMD/SMT

Package / Case

SOIC-8

Gate Charge Qg

26 nC

Lead Free Status / Rohs Status

Details

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

AUIRF7342QTRPBF

Manufacturer:

Quantity:

20 000

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Download datasheet (173Kb)

●

HEXFET

*Qualification standards can be found at http://www.irf.com/

www.irf.com

Description

Specifically designed for Automotive applications, this

cellular design of HEXFET® Power MOSFETs utilizes

the latest processing techniques to achieve low on-resis-

tance per silicon area. This benefit combined with the fast

switching speed and ruggedized device design that

HEXFET power MOSFETs are well known for, provides

the designer with an extremely efficient and reliable

device for use in Automotive and a wide variety of other

applications.

dv/dt

Thermal Resistance

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only;

and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to

absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings

are measured under board mounted and still air conditions. Ambient temperature (T

STG

GSM

θJA

@ T

Advanced Planar Technology

Low On-Resistance

Dual P-Channel MOSFET

Dynamic dV/dT Rating

150°C Operating Temperature

Fast Switching

Fully Avalanche Rated

Lead-Free, RoHS Compliant

Automotive Qualified*

= 25°C

= 70°C

= 25°C

= 70°C

is a registered trademark of International Rectifier.

Drain-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Linear Derating Factor

Gate-to-Source Voltage

Gate-to-Source Voltage Single Pulse tp<10μs

Single Pulse Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Junction-to-Ambient

Power Dissipation

Parameter

AUTOMOTIVE GRADE

@ -10V

Top View

) is 25°C, unless otherwise specified.

(BR)DSS

DS(on)

AUIRF7342Q

-55 to + 150

HEXFET

AUIRF7342Q

Max.

0.016

Max.

62.5

-3.4

-2.7

± 20

114

-55

-27

2.0

1.3

5.0

SO-8

max.

Power MOSFET

0.105Ω

-3.4A

-55V

PD - 97640

mW/°C

Units

°C/W

V/ns

°C

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