FDMS3615S Fairchild Semiconductor, FDMS3615S Datasheet - Page 6

• Manufacturer Part Number: FDMS3615S
• Description: MOSFET Power DUAL N-Channel PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDMS3615S

• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4.8 mOhms
• Forward Transconductance Gfs (max / Min): 63 S
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 16 A
• Power Dissipation: 2.3 W
• Mounting Style: SMD/SMT
• Package / Case: Power 56
• Fall Time: 1.4 ns
• Gate Charge Qg: 19 nC
• Rise Time: 1.7 ns
• Lead Free Status / Rohs Status: Details

FDMS3615S Rev.C6
©2011 Fairchild Semiconductor Corporation
Typical Characteristics (Q1 N-Channel)
0.001
0.01
0.1
2
1
10
-4
D = 0.5
DUTY CYCLE-DESCENDING ORDER
0.2
0.1
0.05
0.02
0.01
Figure 13.
10
-3
Junction-to-Ambient Transient Thermal Response Curve
SINGLE PULSE
R
(Note 1b)
10
θ
JA
-2
= 125
t, RECTANGULAR PULSE DURATION (sec)
o
C/W
10
-1
T
J
6
= 25°C unless otherwise noted
1
NOTES:
DUTY FACTOR: D = t
PEAK T
10
J
= P
DM
x Z
P
θJA
DM
1
/t
x R
2
100
θJA
t
1
+ T
t
2
A
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1000