FDMS3615S Fairchild Semiconductor, FDMS3615S Datasheet - Page 12

MOSFET Power DUAL N-Channel PowerTrench MOSFET

FDMS3615S

Manufacturer Part Number
FDMS3615S
Description
MOSFET Power DUAL N-Channel PowerTrench MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FDMS3615S

Configuration
Dual
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
4.8 mOhms
Forward Transconductance Gfs (max / Min)
63 S
Drain-source Breakdown Voltage
25 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
16 A
Power Dissipation
2.3 W
Mounting Style
SMD/SMT
Package / Case
Power 56
Fall Time
1.4 ns
Gate Charge Qg
19 nC
Rise Time
1.7 ns
Lead Free Status / Rohs Status
 Details

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDMS3615S
Manufacturer:
ON/安森美
Quantity:
20 000
Figure 30. Shows the Power Stage in a buck converter topology
2. Recommended PCB Layout Guidelines
As a PCB designer, it is necessary to address critical issues in layout to minimize losses and optimize the performance of the power
train. Power Stage is a high power density solution and all high current flow paths, such as VIN (D1), PHASE (S1/D2) and GND (S2),
should be short and wide for better and stable current flow, heat radiation and system performance. A recommended layout proce-
dure is discussed below to maximize the electrical and thermal performance of the part.
Figure 31. Recommended PCB Layout
©2011 Fairchild Semiconductor Corporation
12
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FDMS3615S Rev.C6

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