SI1013R-T1 Vishay, SI1013R-T1 Datasheet - Page 4

• Manufacturer Part Number: SI1013R-T1
• Description: MOSFET Small Signal 20V 0.35A 0.15W
• Manufacturer: Vishay

Specifications of SI1013R-T1

• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 1.2 Ohms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: +/- 6 V
• Continuous Drain Current: - 350 mA
• Power Dissipation: 150 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SC-75A
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No

Si1013R/X
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
www.vishay.com
4
- 0.1
- 0.2
- 0.3
0.3
0.2
0.1
0.0
0.01
- 50
0.1
2
1
Threshold Voltage Variance vs. Temperature
10
-4
0.05
0.02
- 25
Duty Cycle = 0.5
0.1
0.2
0
T
J
- Temperature (°C)
Normalized Thermal Transient Impedance, Junction-to-Ambient (SC-75A)
Single Pulse
10
25
-3
I
D
50
= 0.25 mA
7
6
5
4
3
2
1
0
- 50
A
75
10
= 25 °C, unless otherwise noted)
-2
- 25
100
BV
0
GSS
125
T
Square Wave Pulse Duration (s)
J
- Temperature (°C)
vs. Temperature
25
10
-1
50
75
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1
100
- 50
125
- 25
V
10
0
GS
I
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
GSS
T
P
J
DM
= 4.5 V
JM
- Temperature (°C)
vs. Temperature
- T
25
t
1
A
= P
S10-2432-Rev. D, 25-Oct-10
t
2
DM
Document Number: 71167
50
Z
th JA
th JA
100
t
t
1
2
(t)
= 833 °C/W
75
100
600
125