SI1013R-T1-E3 Vishay, SI1013R-T1-E3 Datasheet

MOSFET P-CH 20V 350MA SC-75A

SI1013R-T1-E3

Manufacturer Part Number
SI1013R-T1-E3
Description
MOSFET P-CH 20V 350MA SC-75A
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI1013R-T1-E3

Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1.2 Ohm @ 350mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
350mA
Vgs(th) (max) @ Id
450mV @ 250µA
Gate Charge (qg) @ Vgs
1.5nC @ 4.5V
Power - Max
150mW
Mounting Type
Surface Mount
Package / Case
SC-75-3, SOT-416, EMT3, 3-SSMini
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
1.2 Ohms
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
+/- 6 V
Continuous Drain Current
- 350 mA
Power Dissipation
150 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-350mA
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
2.7ohm
Rds(on) Test Voltage Vgs
-4.5V
Threshold Voltage Vgs Typ
-450mV
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI1013R-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI1013R-T1-E3
Manufacturer:
VISHAY
Quantity:
54 000
Part Number:
SI1013R-T1-E3
Manufacturer:
VISHAY
Quantity:
3 000
Part Number:
SI1013R-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Pulse width limited by maximum junction temperature.
b. Surface mounted on FR4 board.
Document Number: 71167
S10-2432-Rev. D, 25-Oct-10
Ordering Information:
Si1013R-T1-GE3 (SC-75A, Lead (Pb)-free and Halogen-free)
Si1013X-T1-GE3 (SC-89, Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Gate-Source ESD Rating (HBM, Method 3015)
PRODUCT SUMMARY
G
S
V
DS
- 20
1
2
SC-75A or SC-89
(V)
Top View
1.2 at V
1.6 at V
2.7 at V
a
R
3
DS(on)
GS
GS
GS
D
J
b
b
= - 4.5 V
= - 2.5 V
= - 1.8 V
= 150 °C)
for SC-75
for SC-89
()
SC-75A (SOT-416):
Si1013R - Marking Code D
SC-89 (SOT-490):
Si1013X - Marking Code B
P-Channel 1.8 V (G-S) MOSFET
b
b
I
D
- 350
- 300
- 150
(mA)
A
= 25 °C, unless otherwise noted)
T
T
T
T
T
T
A
A
A
A
A
A
= 25 °C
= 85 °C
= 25 °C
= 85 °C
= 25 °C
= 85 °C
FEATURES
APPLICATIONS
BENEFITS
• Halogen-free According to IEC 61249-2-21
• High-Side Switching
• Low On-Resistance: 1.2 
• Low Threshold: 0.8 V (Typ.)
• Fast Switching Speed: 14 ns
• 1.8 V Operation
• TrenchFET
• 2000 V ESD Protection
• Compliant to RoHS Directive 2002/95/EC
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
• Battery Operated Systems
• Power Supply Converter Circuits
• Load/Power Switching Cell Phones, Pagers
• Ease in Driving Switches
• Low Offset (Error) Voltage
• Low-Voltage Operation
• High-Speed Circuits
• Low Battery Voltage Operation
Symbol
T
J
ESD
V
V
Definition
Memories
I
P
, T
DM
I
I
DS
GS
D
S
D
stg
®
Power MOSFETs
- 400
- 300
- 275
175
275
160
5 s
90
- 55 to 150
- 1000
2000
- 20
± 6
Steady State
- 350
- 275
- 250
150
250
140
80
Vishay Siliconix
Si1013R/X
www.vishay.com
Unit
mW
mA
°C
V
V
1

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SI1013R-T1-E3 Summary of contents

Page 1

... D SC-75A (SOT-416): Si1013R - Marking Code SC-89 (SOT-490): Si1013X - Marking Code B Top View Ordering Information: Si1013R-T1-GE3 (SC-75A, Lead (Pb)-free and Halogen-free) Si1013X-T1-GE3 (SC-89, Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage b Continuous Drain Current (T = 150 ° Pulsed Drain Current ...

Page 2

... Si1013R/X Vishay Siliconix SPECIFICATIONS ( °C, unless otherwise noted) A Parameter Symbol Static V Gate Threshold Voltage GS(th) I Gate-Body Leakage I Zero Gate Voltage Drain Current a I On-State Drain Current D(on) Drain-Source On-State R DS(on) a Resistance a Forward Transconductance a V Diode Forward Voltage b Dynamic Total Gate Charge ...

Page 3

... V - Source-to-Drain Voltage (V) SD Surge-Drain Diode Forward Voltage Document Number: 71167 S10-2432-Rev. D, 25-Oct- °C, unless otherwise noted 4 600 800 1000 1.0 1.2 1.4 1 °C J 0.8 1.0 1.2 1.4 Si1013R/X Vishay Siliconix 120 100 rss Drain-to-Source Voltage (V) DS Capacitance 1 ...

Page 4

... Si1013R/X Vishay Siliconix TYPICAL CHARACTERISTICS (T 0.3 0 0.1 0.0 - 0.1 - 0 Temperature (°C) J Threshold Voltage Variance vs. Temperature 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient (SC-75A) www.vishay.com °C, unless otherwise noted 0. 100 125 Temperature (°C) ...

Page 5

... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech- nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71167. Document Number: 71167 S10-2432-Rev. D, 25-Oct- °C, unless otherwise noted Square Wave Pulse Duration (s) Si1013R/X Vishay Siliconix www.vishay.com 5 ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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