SI3851DV-T1 Vishay, SI3851DV-T1 Datasheet - Page 6

• Manufacturer Part Number: SI3851DV-T1
• Description: MOSFET Small Signal 30V 1.8A 1.15W
• Manufacturer: Vishay

Specifications of SI3851DV-T1

• Configuration: Single
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.6 A
• Power Dissipation: 830 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSOP-6
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No RoHS Version Available

Si3851DV
Vishay Siliconix
SCHOTTKY TYPICAL CHARACTERISTICS T
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com
6
0.01
0.01
0.1
0.1
2
1
www.vishay.com/ppg?70978.
2
1
10
10
-4
-4
0.02
0.05
0.2
0.05
Duty Cycle = 0.5
0.1
0.1
0.2
Duty Cycle = 0.5
0.02
Single Pulse
Single Pulse
10
-3
10
-3
Normalized Thermal Transient Impedance, Junction-to-Foot
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-2
Square Wave Pulse Duration (s)
10
Square Wave Pulse Duration (s)
-2
A
10
= 25 °C, unless otherwise noted
-1
10
1
-1
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
1
Notes:
P
0
DM
JM
- T
A
t
1
1
= P
S09-2275-Rev. B, 02-Nov-09
t
2
DM
Document Number: 70978
Z
thJA
thJA
100
(t)
t
t
1
2
= 140 °C/W
6
0
1
0
0